Memory and Storage Questions

• A typical RAM will write (store data internally) whenever the Chip Select line is active and the Write Enable line is inactive.
• RAM is nonvolatile.
• Dynamic memories, such as the 2118 16K × 1 RAM, have to multiplex the address bus.
• The time from the beginning of a read cycle to the point when the data output is valid is called propagation delay.
• Most flash chips use a bulk erase operation in which all cells on the chip are erased simultaneously.
• In a register stack, data moves up but not down.
• Static memory will maintain storage even if power is removed.
• The main advantage of bipolar (TTL) memories over MOS memories is speed.
• Cache memory is used in high-speed systems.
• Information stored in an EPROM can be erased by prolonged exposure to ultraviolet light.
• EEPROMS can be electrically erased and reused.
• An optical disk is an example of magnetic storage.
• One of the advantages of DRAMs is their ability to store data without needing periodic refreshment of the memory contents.
• The EPROM is strictly a MOS device.
• The highest-speed magnetic storage is achieved by using a floppy disk.
• Due to their ability to be easily erased and reused, magnetic memory devices are widely used for RAM.
• Erasing or programming a flash memory device is a one-step operation.
• Static RAMs (SRAMs) use internal capacitors as basic storage elements.
• The time delay called access time, tac, is a measure of the ROM's operating speed.
• ROM is a type of memory in which data are stored permanently or semipermanently.