Memory and Storage Questions

• The storage element for a static RAM is the ________.
• What is the principal advantage of using address multiplexing with DRAM memory?
• What is the bit storage capacity of a ROM with a 1024 × 8 organization?
• Refer the given figure. The outputs (Q0–Q3) of the memory are always LOW. The address lines (A0–A7) are checked with a logic probe and all are indicating pulse activity, except for A3, which shows a constant HIGH, and A7, which shows a constant LOW; the select lines, are checked and shows pulse activity, while indicates a constant HIGH. What is wrong, and how can the memory be tested to determine whether it is defective or if the external circuitry is defective?
• In a DRAM, what is the state of R/W during a read operation?
• Which type of ROM can be erased by an electrical signal?
• The check sum method of testing a ROM:
• The device shown in the given figure is checked with a logic probe and the output is HIGH.
• Select the statement that best describes Read-Only Memory (ROM).
• L1 is known as ________.
• Select the statement that best describes the fusible-link PROM.
• The RAM circuit given below is suspected of being bad. A check with a logic probe shows pulse activity on all of the address lines and data inputs. The / line and inputs are forced HIGH and the data output lines are checked with the logic probe. Q0, Q2, and Q3 show a dim indication on the logic probe; Q1 indicates a HIGH level on the logic probe. What, if anything, is wrong with the circuit?
• What is a major disadvantage of RAM?
• What does the term "random access" mean in terms of memory?
• Which of the following faults will the checkerboard pattern test for in RAM?
• Which of the following best describes volatile memory?
• The periodic recharging of DRAM memory cells is called ________.
• Which of the following best describes EPROMs?
• The smallest unit of binary data is the ________.
• How many address lines would be required for a 2K × 4 memory chip?