Introduction:
Electrically Erasable Programmable Read-Only Memory (EEPROM) is a non-volatile memory that supports electrical erase and reprogramming, typically at the byte or page granularity. The statement evaluates whether electrical erasure and reuse are defining features of EEPROMs.
Given Data / Assumptions:
- EEPROM uses floating-gate transistors similar to flash.
- Erase/rewrite cycles are finite but large (e.g., 10^4 to 10^6 cycles depending on device).
- No UV exposure is required for erasure.
Concept / Approach:
EEPROMs permit in-circuit electrical erase and programming by applying controlled voltages to tunnel charges on or off the floating gate. This enables configuration storage, calibration constants, and data logging that survives power cycles and can be updated as needed, subject to endurance limits.
Step-by-Step Solution:
Acknowledge technology: floating-gate MOS with electrical tunneling for erase/program.Define operation: device supports erase then program cycles on selected locations.Conclude: electrical erase and reuse are core EEPROM capabilities.
Verification / Alternative check:
Datasheets specify write/erase protocols, endurance ratings, and retention times (often 10 years or more).
Why Other Options Are Wrong:
Incorrect: Conflicts with the definition of EEPROM.True only once per device: Endurance is limited but far greater than one cycle.True only if UV light is applied: UV applies to EPROM, not EEPROM.
Common Pitfalls:
Equating EEPROM with flash; flash usually erases in blocks, while EEPROM often supports finer granularity.Ignoring endurance management (wear leveling) in frequent-write applications.
Final Answer:
Correct
Discussion & Comments