Flash memory operations and timing: Evaluate the statement: “Erasing or programming a flash memory device is a one-step operation.” Consider that flash typically uses block (sector) erase followed by page/word program sequences under controller supervision.

Introduction / Context:
Flash memory devices (NAND and NOR) are nonvolatile and widely used in embedded systems, SSDs, and firmware storage. Understanding their program/erase flow is essential for designing reliable storage stacks and meeting endurance, latency, and data integrity requirements.

Given Data / Assumptions:

• The claim states erase/program is a single-step action.
• Flash devices organize data into blocks/sectors (erase units) and pages/words (program units).
• Standard flash timing includes setup, command sequences, status polling, and verification.

Concept / Approach:
Flash cells must be erased (typically to all 1s) before programming 0s into selected locations. Erase and program are distinct operations with different command codes, latencies, and endurance effects. Controllers orchestrate multi-step sequences: issue command, address, data, execute, poll status, and verify. Hence, describing them as “one-step” is inaccurate.

Step-by-Step Solution:

Verification / Alternative check:
Device datasheets show separate timing diagrams and specifications for tBERS (block erase time) and tPROG (program time), confirming multi-step flows rather than a single atomic step.

Why Other Options Are Wrong:

• Correct: Misrepresents flash operation.
• Applies only to EEPROM: EEPROM supports byte-wise electrical erase, but still involves multi-step command sequences.
• Ambiguous: Even with controllers, command sequences remain distinct steps.

Common Pitfalls:
Confusing “issuing one high-level API call” with the device’s internal multi-step process; overlooking mandatory erase-before-program constraints.

Final Answer:
Incorrect