Difficulty: Easy
Correct Answer: Correct
Explanation:
Introduction: EPROMs (Erasable Programmable ROMs) are implemented using floating-gate MOS transistors. This question checks foundational device-technology knowledge: whether EPROM belongs to the MOS family. Understanding this helps distinguish EPROM from bipolar PROMs and other memory technologies.Given Data / Assumptions:
Concept / Approach: Since the storage mechanism is charge on a floating gate within a MOSFET, EPROM is a MOS technology by definition. Bipolar PROMs store data via fusible links or anti-fuses and are distinct. Package style (with or without quartz window) does not change the underlying MOS device physics.Step-by-Step Solution:
Identify cell structure: floating-gate MOS transistor.Relate operations: electrical programming and UV erasure alter charge on the floating gate.Conclude: EPROM is a MOS device family member.Verification / Alternative check:
Review technology descriptions in memory textbooks: EPROM and EEPROM/flash are categorized under MOS non-volatile memories.Why Other Options Are Wrong:
Incorrect: Conflicts with the floating-gate MOS implementation.True only for EEPROM: Both EPROM and EEPROM are MOS-based.Depends on package type: Ceramic vs plastic does not change transistor technology.Common Pitfalls:
Confusing bipolar PROM fuse technologies with EPROM.Assuming "windowed" package implies a different device physics family.Final Answer:
Correct
Discussion & Comments