SRAM storage mechanism: Assess the statement: “Static RAMs (SRAMs) use internal capacitors as the basic storage elements.” Clarify by contrasting SRAM cells with DRAM cells.

Introduction / Context:
Volatile memory technologies differ in the circuitry that stores each bit. Knowing whether storage relies on capacitors or cross-coupled transistors is fundamental for understanding refresh requirements, speed, and power characteristics.

Given Data / Assumptions:

• Claim: SRAM uses capacitors as storage elements.
• SRAM cells are commonly 6-transistor (6T) cross-coupled inverters plus access transistors.
• DRAM cells are 1-transistor/1-capacitor (1T1C) and require refresh.

Concept / Approach:
SRAM stores data in a bistable latch built from cross-coupled inverters. As long as power is applied, the latch holds its state without refresh. DRAM stores charge on a capacitor that leaks over time, hence periodic refresh is mandatory. Therefore, attributing capacitors to SRAM is incorrect; capacitors characterize DRAM storage.

Step-by-Step Solution:

Verification / Alternative check:
Any basic microelectronics text or memory datasheet illustrates 6T SRAM and 1T1C DRAM schematics, confirming the fundamental difference.

Why Other Options Are Wrong:

• Correct: Would misclassify SRAM technology.
• Applies only to DRAM: DRAM indeed uses capacitors; the claim targeted SRAM.
• Valid for pseudo-static RAM: PSRAM wraps DRAM in a controller to emulate SRAM timing, but the underlying storage is DRAM, not SRAM.

Common Pitfalls:
Assuming all volatile memories need refresh; conflating PSRAM behavior with true SRAM cell structure.

Final Answer:
Incorrect