MOSFET structure and biasing: Does a MOSFET feature an electrically insulated (isolated) gate that draws negligible steady-state current?

Introduction / Context:
The defining characteristic of MOSFETs is their insulated gate structure, typically using a thin oxide between the gate electrode and the semiconductor. This isolation enables extremely high input impedance and allows voltage control with virtually no steady-state gate current, a key advantage over junction-gate devices and BJTs.

Given Data / Assumptions:

• Gate dielectric is usually silicon dioxide or high-k material.
• Gate–channel structure forms a capacitor; gate current is leakage-limited.
• Normal operation avoids oxide breakdown and ESD damage.
• Comparison with JFET/BJT is for context only.

Concept / Approach:
Because the gate is insulated, the control mechanism is purely electric field. The gate voltage modulates channel charge without requiring continuous charge injection. As a result, DC gate current is near zero (aside from leakage on the order of nanoamps or less), allowing high impedance interfaces and minimal loading on preceding stages.

Step-by-Step Solution:

Verification / Alternative check:
Datasheets list gate leakage (IGSS) values orders of magnitude smaller than source/drain currents, confirming isolation. Contrast with a JFET or BJT, where junctions draw bias currents or have diode conduction under various biases.

Why Other Options Are Wrong:

Common Pitfalls:
Assuming the insulated gate is immune to ESD; forgetting that transient charging/discharging of the gate capacitance does require current; exceeding maximum VGS can puncture the oxide.

Final Answer:
Correct