Terminology: Is transconductance commonly referred to as mutual conductance in the context of FET and vacuum-tube amplifiers?

Introduction / Context:
Transconductance (gm) is a central small-signal parameter in FETs and also historically in vacuum tubes. It quantifies how much output current changes for a given input voltage change. The traditional term “mutual conductance” is synonymous with transconductance and appears widely in classic texts and modern datasheets.

Given Data / Assumptions:

• gm units are siemens (A/V).
• For FETs, gm = dID/dVGS at the operating point.
• For tubes, gm = dIP/dVG.
• Voltage gain depends on gm and load impedance, not gm alone.

Concept / Approach:
Because gm is a conductance relating current change to voltage change across different ports, “mutual conductance” aptly names the cross-port nature of the parameter. In circuit design, gm helps predict gain: Av ≈ gm * RD in a source-degeneration-free common-source stage (simplified).

Step-by-Step Solution:

Verification / Alternative check:
Examine terminology in device literature; both terms are used interchangeably, often with gm specified in mS (millisiemens).

Why Other Options Are Wrong:

Common Pitfalls:
Confusing gm with transresistance (ohms); assuming gm alone equals stage gain; ignoring bias dependence of gm.

Final Answer:
Correct