Terminology: Is transconductance commonly referred to as mutual conductance in the context of FET and vacuum-tube amplifiers?

Difficulty: Easy

Correct Answer: Correct

Explanation:

Introduction / Context:Transconductance (gm) is a central small-signal parameter in FETs and also historically in vacuum tubes. It quantifies how much output current changes for a given input voltage change. The traditional term “mutual conductance” is synonymous with transconductance and appears widely in classic texts and modern datasheets.

Given Data / Assumptions:

  • gm units are siemens (A/V).
  • For FETs, gm = dID/dVGS at the operating point.
  • For tubes, gm = dIP/dVG.
  • Voltage gain depends on gm and load impedance, not gm alone.

Concept / Approach:Because gm is a conductance relating current change to voltage change across different ports, “mutual conductance” aptly names the cross-port nature of the parameter. In circuit design, gm helps predict gain: Av ≈ gm * RD in a source-degeneration-free common-source stage (simplified).

Step-by-Step Solution:

Define gm: gm = ΔIout / ΔVin with units A/V.Recognize synonyms: mutual conductance = transconductance.Relate to gain: Av depends on gm and load; gm alone is not gain.Conclude: the statement is correct.

Verification / Alternative check:Examine terminology in device literature; both terms are used interchangeably, often with gm specified in mS (millisiemens).

Why Other Options Are Wrong:

Incorrect: contradicts standard terminology.Only BJTs: BJTs use beta or gm differently defined (gm = IC/VT), but the synonymy is documented primarily for FETs and tubes as well.Resistance: inverse concept; gm is conductance, not resistance.Voltage gain only: gain is dimensionless; gm has units of siemens.

Common Pitfalls:Confusing gm with transresistance (ohms); assuming gm alone equals stage gain; ignoring bias dependence of gm.

Final Answer:Correct

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