Device comparison: Is a JFET “very similar” to a BJT in operating principle and control, or are they fundamentally different (voltage-controlled vs current-controlled)?

Introduction / Context:
Though both are called “transistors,” BJTs and JFETs operate on different principles. BJTs are current-controlled devices relying on carrier injection across a forward-biased junction, while JFETs are voltage-controlled devices using electric field to modulate a channel via reverse-biased junctions. Treating them as “very similar” leads to wrong biasing and modeling choices.

Given Data / Assumptions:

• BJT terminals: base, collector, emitter; JFET terminals: gate, drain, source.
• BJT needs base current; JFET gate current is negligible (reverse-biased).
• Small-signal models and transfer functions differ substantially.
• Thermal and noise behaviors are different in practice.

Concept / Approach:
The JFET controls conduction by changing depletion width with gate voltage; the BJT controls collector current by base-emitter junction charge injection. One is predominantly voltage-controlled with high input impedance; the other is current-controlled with finite input resistance. Therefore, they are not “very similar” in operation, despite both being three-terminal semiconductor amplifying devices.

Step-by-Step Solution:

Verification / Alternative check:
Compare small-signal parameters: transconductance expression for JFET differs from BJT (gm behavior vs IC and device constants), reinforcing different physics.

Why Other Options Are Wrong:

Common Pitfalls:
Porting BJT bias networks to JFETs unchanged; expecting the same temperature drift or noise characteristics; mixing up terminal names.

Final Answer:
Incorrect