JFET terminology check: Are the “breakdown voltage” and the “pinch-off voltage” simply two names for the same JFET voltage? Choose the best evaluation.

Introduction / Context:
JFET operation involves two important voltages: pinch-off and breakdown. Knowing the difference prevents biasing a device into destructive regions or misreading transfer curves.

Given Data / Assumptions:

• Pinch-off voltage (V_P): channel just pinched and current becomes relatively constant with V_DS increase.
• Breakdown voltage (V_BR): avalanche or junction breakdown occurs at excessive reverse bias.
• We consider standard JFET operation with reverse-biased gate-channel junction.

Concept / Approach:
V_P defines the transition to the constant-current region (for a given V_GS), whereas V_BR is a high-voltage limit where the gate-channel junction avalanches. They are separated by a large margin on the output characteristic. Confusing them risks device failure.

Step-by-Step Solution:

Verification / Alternative check:
Review any JFET datasheet: V_P (or V_GS(off)) appears near a few volts; breakdown ratings are much higher (tens of volts), clearly distinct.

Why Other Options Are Wrong:
Correct / Ambiguous / Equivalent only for p-channel: None align with standard JFET curves where these voltages are categorically different.

Common Pitfalls:
Equating current saturation with breakdown, or misreading V_GS(off) as a breakdown limit. Each has separate specifications and design implications.

Final Answer:
Incorrect