Difficulty: Easy
Correct Answer: Correct
Explanation:
Introduction / Context:Key JFET parameters include IDSS and VGS(OFF). Together they describe the transfer characteristic and are used in bias calculations. VGS(OFF) is the gate-to-source voltage at which the channel is fully pinched off and the drain current approaches zero (cutoff).
Given Data / Assumptions:
Concept / Approach:The depletion regions from the gate junction widen with increasing |VGS|, narrowing the channel. At VGS(OFF), the channel is pinched off across its entire length, stopping conduction apart from leakage. This is the end-point on the transfer curve opposite IDSS (at VGS = 0 V).
Step-by-Step Solution:
Start from Shockley: ID = IDSS * (1 − VGS/VP)^2; with VP ≈ VGS(OFF).Set ID → 0: occurs when VGS approaches VGS(OFF).Interpret polarity: n-channel has VGS(OFF) negative; p-channel positive.Conclude: definition aligns with the statement.Verification / Alternative check:Datasheet transfer curves mark cutoff at VGS(OFF) where ID is near the leakage floor, confirming the interpretation.
Why Other Options Are Wrong:
Incorrect: conflicts with standard definition.Only for MOSFETs: VTH is used for MOSFETs; VGS(OFF) is standard for JFETs.Synonym for IDSS: IDSS is maximum ID at VGS = 0 V, not cutoff.Drain–gate breakdown: a separate maximum rating (BVGD or similar), unrelated to cutoff.Common Pitfalls:Confusing VGS(OFF) with MOSFET threshold; missing sign conventions; using ID ≈ 0 without accounting for leakage in precision designs.
Final Answer:Correct
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