Curioustab
Aptitude
General Knowledge
Verbal Reasoning
Computer Science
Interview
Aptitude
General Knowledge
Verbal Reasoning
Computer Science
Interview
Matching Questions Questions
Match the following: List I List II A. Reflex Klystron 1. High efficiency B. Dielectric loaded wave guide 2. Slow wave structure C. TWT 3. Cross field device D. Multi Cavity Klystron 4. Oscillator
Match the following: List I List II A. Multiplexer 1. Sequential memory B. De-multiplexer 2. Converts decimal number to binary C. Shift register 3. Data selector D. Encoder 4. Routes single input to many outputs
Match the following: List I List II A. Total instantaneous value of emitter current 1. IE B. Quiescent value of emitter current 2. iE C. Instantaneous value of as component of emitter current 3. Ie D. RMS value of ac component of emitter current 4. ie
Match the following: List I (Component) List II (Dominant TE mode) A. Rectangular wave guide 1. TE101 B. Circular waveguide 2. TE10 C. Rectangular cavity 3. TE111 4. TE11
Match the following: List I List II A. T (Reflection coefficient) = 0 1. (ZL - Zo)/(ZL + Zo) B. T = - 1 2. ZL = Zo C. T = + 1 3. ZL = 0 D. - 1 < T < + 1 4. ZL = ∞
Match the following: List I List II A. AM-DSB FC 1. 2 B. WBFM 2. 1 C. PCM 3. 3m D. AM-DSB 4. 22N
List I (Parameters) List II (Values) A. h22 1. rb + re B. h11 2. acb C. h21 3.
Match the following: List I List II A. IF noise 1. Ganged tuning B. Image frequency 2. Spurious response C. Station selector 3. Leaky filter capacitor D. Excessive Hum 4. Mixer stage
Match the following: List I (Diode circuit) List II (Name of the circuit) A. 1. Positive limiter B. 2. Positive clamper C. 3. Negative clamper
Match the following: List I (Modes) List II (Characteristic) A. Evanescent 1. Rectangular waveguide does not support B. Dominant mode 2. No wave propagation C. TM10 and TM01 3. Lowest cut-off frequency
Match the following: List I List II A. D Layer 1. 110 km B. E layer 2. 10 km C. F layer 3. 60 km D. Troposphere 4. 350 km
Match the following: List I List II A. loop antenna 1. flat line B. folded dipole 2. 300 W C. SWR of 1 3. sharp broadside full D. VHF band 4. 30 to 300 MHz
Match the following: List I (Devices) List II (characteristic) A. BJT 1. Voltage controlled negative resistance B. MOSFET 2. High current gain C. Tunnel diode 3. Voltage regulation D. Zener diode 4. High input impedance
Match the following: List I (Logic) List II (Characteristic) A. RTL 1. High fan out B. CMOS 2. Highest speed of operation C. I2L 3. High noise immunity D. ECL 4. Lowest product of power and delay
Match the following: List I List II A. Effective length of antenna 1. B. Capture area 2. C. Front to back ratio 3.
Match the following: List I List II A. FM 1. slope-overload B. DM 2. μ law C. PSK 3. Envelope detector D. PCM 4. Capture effect 5. Hilbert transform 6. Matched filter.
Match the following: List I (Power device) List II (Max. frequency) A. Power Bipolar 1. MHz B. Power MOSFET 2. 100 kHz C. SCR 3. 10 kHz D. Insulated gate bipolar transistor 4. 1 kHz
Match the following: List I List II A. Detection of a periodic signal in noise 1. Increase in band-width B. Recovery of a band limited signal from its uniformly sampled values 2. Slope over load error C. Finer quantization 3. Nyquist rate of signals D. Delta modulation 4. Cross correlation
Match the following: List I (Amplifier coupling) List II (Feature) A. RC 1. High voltage gain and impedance matching B. Inductive 2. Ability to amplify dc and low frequency signals C. Transformer 3. Minimum non-linear distortion D. Direct 4. Low collector supply voltage can be used
Match the following: List I List II A. SUS 1. B. SBS 2. C. SCS 3. D. Shockley diode 4.
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