EEPROM fundamentals – which statement accurately describes information stored in an EEPROM device used in digital systems?

Introduction / Context:
Electrically Erasable Programmable Read-Only Memory (EEPROM) is common for configuration bytes, calibration constants, and firmware parameters. Distinguishing EEPROM from EPROM, Flash, and RAM avoids design errors in embedded systems and field updates.

Given Data / Assumptions:

• Nonvolatile storage required (retains data without power).
• Random byte or small page access typical for EEPROM.
• Erase/program operations use internal charge pumps to apply elevated voltages safely.

Concept / Approach:
EEPROM stores charge on floating gates and supports electrical erase/program in-circuit. Unlike EPROM (UV-erasable) and PROM (one-time), EEPROM can be updated repeatedly at fine granularity. The erase/program sequence employs controlled high-voltage pulses (generated on-chip) to tunnel charge, but from a system viewpoint it is simply an electrical command over I2C/SPI/parallel interfaces.

Step-by-Step Solution:

Verification / Alternative check:
Vendor datasheets list write/erase command sets and endurance (for example, 100k+ cycles), with retention specs measured in years—no UV window is present.

Why Other Options Are Wrong:
Manufacturer-fixed refers to mask ROM; volatility describes RAM; UV erasure describes EPROM; forced sequential rewrite is not a universal EEPROM constraint.

Common Pitfalls:
Confusing EEPROM with Flash (block erase) or EPROM (UV erase). EEPROM’s electrical erase at small granularity is its hallmark.

Final Answer:
is electrically erasable and reprogrammable using controlled high-voltage pulses