PROM programming mechanism: Programmable Read-Only Memories (PROMs) are one-time programmable devices. They are programmed by permanently altering on-chip fuses. Choose the most accurate verb describing this fuse action.

Introduction / Context:
PROM devices allow a user or manufacturer to program fixed data patterns after fabrication but only once. The programming process uses elevated voltages and currents to permanently change the state of fusible links, defining 1s and 0s in the array. Understanding the correct terminology clarifies how PROMs differ from erasable types like EPROM and EEPROM.

Given Data / Assumptions:

• PROMs contain fusible links or antifuses per memory cell.
• Programming is irreversible in standard PROMs.
• Terminology often used in datasheets: “blow the fuses.”

Concept / Approach:
During programming, a controlled overcurrent melts (opens) a fusible link, or closes an antifuse structure, setting the logical state. This permanent change is succinctly described as “blowing” fuses. Other terms like “charging” fit EPROM/EEPROM mechanisms (charge storage in floating gates), not fuse-based PROMs.

Step-by-Step Solution:
1) Apply programming voltage per device spec.2) Drive programming current through selected links.3) Physical change in the fuse sets the bit permanently.4) Verify programmed pattern; no erasure step exists for standard PROM.

Verification / Alternative check:
PROM datasheets and historical references describe one-time programmability via fuses/antifuses and use the verb “blow” for fuses.

Why Other Options Are Wrong:
“Zapping” is colloquial and non-specific. “Charging” implies floating-gate devices (EPROM/EEPROM/flash). “Inputting” is not a physical mechanism.

Common Pitfalls:
Confusing PROM with EPROM/EEPROM; assuming programmed PROM can be erased.

Final Answer:
blowing