Nonvolatile, electrically erasable memory type: Select the device that is user programmable and can be erased electronically and reprogrammed many times without removal from the circuit.

Introduction / Context:
Nonvolatile memories differ in how they are programmed and erased. Choosing the right technology depends on update frequency, in-circuit programmability, endurance, and data retention. The common technologies are PROM, EPROM, EEPROM, and flash (a variant of EEPROM array architectures).

Given Data / Assumptions:

• PROM: one-time programmable via fuse/antifuse.
• EPROM: erasable with ultraviolet light; requires removal from circuit for exposure.
• EEPROM: electrically erasable and programmable in-circuit.
• Mask ROM: fixed at manufacture (not listed among options here but conceptually distinct from ROM generic).

Concept / Approach:
EEPROM supports electrical erasure at byte or small block granularity and reprogramming without removing the device. It is field-updatable and well-suited to configuration storage. PROM cannot be erased; EPROM requires UV light and typically a windowed package; generic ROM is not user-programmable.

Step-by-Step Solution:
1) Eliminate non-rewritable options: PROM and plain ROM are not erasable by the user.2) Consider EPROM: rewritable but only via UV exposure, not electronic in-circuit erasure.3) EEPROM matches the requirement: user programmable, electronically erasable, reprogrammable many times.4) Therefore select EEPROM.

Verification / Alternative check:
Device families and microcontroller datasheets (e.g., on-chip EEPROM) explicitly state electronic erase/program capability and endurance ratings in write cycles.

Why Other Options Are Wrong:
PROM is one-time programmable. ROM is manufactured with fixed contents. EPROM requires UV light and removal from circuit for erasure.

Common Pitfalls:
Confusing flash and EEPROM granularity; assuming EPROM can be erased electrically—it cannot.

Final Answer:
EEPROM