Order of resistivity for intrinsic semiconductors at room temperature (≈300 K) The resistivity of intrinsic semiconductors at room temperature is typically of the order of:

Introduction / Context:
Intrinsic semiconductors such as ultrapure silicon and germanium conduct via thermally generated electron–hole pairs. Their resistivity lies between that of good metals and insulators. Knowing the correct order of magnitude helps distinguish intrinsic from doped semiconductor behavior and from metals or dielectrics in circuit design and materials selection.

Given Data / Assumptions:

• Temperature near 300 K (room temperature).
• Intrinsic (undoped) material; no intentional donors/acceptors.
• Macroscopic bulk sample; no nanostructure effects.

Concept / Approach:

Intrinsic resistivity ρ depends on intrinsic carrier concentration n_i and carrier mobilities: σ = q (n_i μ_n + n_i μ_p) = q n_i (μ_n + μ_p), with ρ = 1/σ. For Si at 300 K, n_i ≈ 10^10 cm^-3; with mobilities of order 10^3 cm^2/V·s (combined), σ is small, giving ρ around 10^3 Ω·m. Ge has much higher n_i, hence lower ρ, yet still many orders of magnitude higher than metals and far lower than typical insulators (10^8–10^12 Ω·m).

Step-by-Step Solution:

Verification / Alternative check:

Device and materials handbooks tabulate intrinsic Si resistivity in the 10^2–10^4 Ω·m range near 300 K, consistent with the chosen order.

Why Other Options Are Wrong:

1 Ω·m and 10^-3 Ω·m are characteristic of poor or good conductors respectively; 10^6 Ω·m corresponds to good insulators, not intrinsic semiconductors at room temperature.

Common Pitfalls:

Confusing intrinsic values with lightly doped silicon (which can be far more conductive) or with amorphous insulators.

Final Answer:

1000 Ω-m