Curioustab
Aptitude
General Knowledge
Verbal Reasoning
Computer Science
Interview
Aptitude
General Knowledge
Verbal Reasoning
Computer Science
Interview
Electronic Devices and Circuits Questions
A zener diode is used in
In an n-p-n transistor, the majority carriers in the base are
In p-n-p transistor the current IE has two components viz. IEP due to injection of holes from p-region to n-region and IE due to injection of electrons from n-region to p-region. Then
The amount of photoelectric emission current depends on
At room temperature the current in an intrinsic semiconductor is due to
In the circuit of figure the function of resistor R and diode D are
In a bipolar transistor which current is largest
Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor. Reason (R): The addition of donor impurity creates additional energy levels below conduction band.
A transistor has two p-n junctions. The batteries should be connected such that
A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
A p-n junction diode has
Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C. Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.
Calculate the stability factor and change in IC from 25°C to 100°C for, β = 50, RB/ RE = 250, ΔIC0 = 19.9 nA for emitter bias configuration.
An increase in temperature increases the width of depletion layer.
An amplifier without feedback has a voltage gain of 50, input resistance of 1 kΩ and output resistance of 2.5 kΩ. The input resistance of the current shunt -ve feedback amplifier using the above amplifier with a feedback factor of 0.2 is
Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.
Crossover distortion behaviour is characteristic of
In which of these is reverse recovery time nearly zero?
The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification
In which region of a CE bipolar transistor is collector current almost constant?
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