Difficulty: Easy
Correct Answer: HIGH, read
Explanation:
Introduction / Context:Control-signal polarity matters in DRAM timing. Many DRAM families use active-low write enables (sometimes labeled W or WE). Understanding which state corresponds to read or write avoids bus-contention bugs and corrupted data.
Given Data / Assumptions:
Concept / Approach:During a read, the device must not sample data-in; instead, it should drive data-out. Thus W remains in the deasserted (HIGH) state for read. During a write, W goes LOW to enable storing D at the addressed location while outputs are typically not driven.
Step-by-Step Solution:
Set up row/column via RAS/CAS.For read: keep W HIGH (inactive) and enable outputs as specified.For write: drive W LOW (active) with valid input data and timing.Verification / Alternative check:Consult any classic DRAM timing: WE=HIGH indicates read; WE=LOW indicates write pulse width and data setup.
Why Other Options Are Wrong:
Hi-Z states do not apply to W; Hi-Z relates to outputs, not the control input level.HIGH, write contradicts active-low write convention.LOW, refresh: Refresh is driven by RAS/CAS cycling, not by forcing W alone.Common Pitfalls:Confusing output tri-state with control input levels or assuming all signals use active-high logic.
Final Answer:HIGH, read
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