Memory timing — typical tOE ranges by technology Considering common memory technologies, which set lists typical output-enable time (tOE) ranges?

Introduction / Context:
The parameter tOE (output enable access time) indicates how quickly a memory's outputs respond after the output-enable control is asserted. Different process technologies exhibit different speed ranges. Recognizing realistic ranges helps you sanity-check datasheets and timing budgets.

Given Data / Assumptions:

• Bipolar memories historically offered very fast switching (small tOE values).
• NMOS devices typically have moderate tOE values, slower than bipolar.
• CMOS devices vary, often between bipolar and NMOS depending on generation and design.

Concept / Approach:
Each option presents a plausible range for a given technology. Since all three sets are within realistic historical/typical ranges, the correct aggregate choice is that all are acceptable examples. Exact numbers vary by device family and year, but the orders of magnitude are consistent.

Step-by-Step Solution:
Evaluate bipolar: 10–20 ns → consistent with fast bipolar memories.Evaluate NMOS: 25–100 ns → consistent with classic NMOS speeds.Evaluate CMOS: 12–50 ns → plausible for many CMOS SRAM/ROM families.Therefore, accept all three → choose “All of the above”.

Verification / Alternative check:
Historical datasheets (e.g., fast bipolar SRAMs, NMOS EPROMs, CMOS SRAMs/ROMs) show tOE values in these neighborhoods, though exact numbers depend on process nodes and design targets.

Why Other Options Are Wrong:

• Choosing only one technology ignores that each range is independently reasonable.

Common Pitfalls:

• Confusing tOE with tACC (overall access time) or tRC (cycle time). They are related but distinct parameters.
• Assuming modern deep-submicron CMOS must always be faster; packaging and I/O design also influence tOE.

Final Answer:
All of the above