Q: Ideal transformer power transfer (self-contained repair): Assume the transformer discussed earlier delivers 100 W of input power at its primary winding. If the transformer is considered 100% efficient (no copper loss, no core loss, and no leakage), …

Introduction / Context: An ideal transformer is a theoretical model used in basic electrical engineering. It assumes perfect magnetic coupling, zero winding resistance, and no core losses. Under these assumptions, all input power at the primary is transferred to the secondary. This question applies that ideal-energy-conservation concept directly to determine the secondary power from a known primary power. Given Data / Assumptions: Primary input power = 100 W (explicitly stated to repair the incomplete cross-reference). Efficiency = 100% (ideal transformer: no losses). No need for turns ratio, voltages, or currents since we compare total power. Concept / Approach: For an ideal transformer, power_in = power_out. While the voltage and current values change according to the turns ratio (V scales with turns ratio, I scales inversely), their product (P = V * I) remains the same when losses are zero. Therefore, secondary power equals primary power. Step-by-Step Solution: Define efficiency: η = P_out / P_in.Set η = 1.0 (100%).Compute P_out = η * P_in = 1.0 * 100 W.Therefore, P_out = 100 W at the secondary. Verification / Alternative check: If a turns ratio changed voltage by factor a and current by 1/a, then P_out = (a * V_in) * (I_in / a) = V_in * I_in = P_in, confirming conservation in the ideal case. Why Other Options Are Wrong: 200 W, 1000 W: imply power gain, impossible without an external energy source.20 W: implies losses or regulation to only 20%—contradicts the 100% efficiency premise.None of the above: incorrect because 100 W is valid. Common Pitfalls: Confusing voltage/current transformation with power amplification; forgetting that real transformers are less than 100% efficient (typically 95–99+%), but the ideal model uses 100% for teaching and quick estimation. Final Answer: 100 W

Q: A Zener diode has a specified Zener voltage of 10 V and conducts a current of 20 mA in regulation. What is the power dissipation in the device?

Introduction / Context: Zener diodes are used for voltage regulation by operating in reverse breakdown at approximately constant voltage. Knowing the Zener voltage and current allows direct computation of power dissipation, which is critical for selecting an adequate power rating and heat management. Given Data / Assumptions: Zener voltage V_Z = 10 V. Zener current I_Z = 20 mA = 0.02 A. Steady-state operation within safe breakdown region. Concept / Approach: Device power dissipation is P = V * I. For a Zener in regulation, the voltage across the device is approximately V_Z while the current is I_Z. Multiply to find the dissipation in watts, then convert to milliwatts if convenient. Step-by-Step Solution: Use formula: P = V_Z * I_Z.Substitute: P = 10 V * 0.02 A.Compute: P = 0.2 W.Convert: 0.2 W = 200 mW. Verification / Alternative check: Quick mental math: 10 * 2 = 20; place decimal for 0.02 A gives 0.2 W = 200 mW, consistent. Why Other Options Are Wrong: 300 mW: would require 30 mA at 10 V.20 mW or 10 mW: far too low for the stated voltage and current.None of the above: incorrect because 200 mW is exact. Common Pitfalls: Confusing milliamps and amps when multiplying; ignoring the device power rating (must exceed calculated dissipation with margin). Final Answer: 200 mW

Q: Kirchhoff’s Voltage Law (KVL): Which statement correctly expresses KVL for any closed loop in an electrical network?

Introduction / Context: Kirchhoff’s laws are foundational for circuit analysis. Kirchhoff’s Voltage Law (KVL) applies energy conservation to a closed loop: as you traverse a loop, rises and drops in potential must balance out to zero. This law is independent of component details and holds for lumped, time-invariant circuits. Given Data / Assumptions: We consider closed loops in a lumped circuit. Voltages are taken with sign (algebraic sum). Steady-state or quasi-static conditions where lumped-parameter assumptions are valid. Concept / Approach: KVL states: ΣV_loop = 0. Practically, the sum of source rises equals the sum of component drops around any loop. This is a direct application of energy conservation—returning to the starting node leaves net energy change at zero. Step-by-Step Solution: Define a loop and a traversal direction.Add signed voltage rises and drops encountered.Set the algebraic sum equal to zero: ΣV = 0.Use this to solve for unknown voltages or currents via Ohm’s law relationships. Verification / Alternative check: Apply to a simple source-resistor loop: V_source − I*R = 0 ⇒ I = V_source / R, which matches Ohm’s law. Why Other Options Are Wrong: Parallel circuit statement: unrelated to KVL and not generally true.Proportional voltage drop: this is Ohm’s law, not KVL.Node statement: that is Kirchhoff’s Current Law (KCL), not KVL. Common Pitfalls: Mixing KVL and KCL; neglecting polarity when summing voltages; forgetting that induced emf or time-varying fields can require careful treatment. Final Answer: The algebraic sum of voltages in a loop is equal to zero

Q: For a series RC circuit driven by a sinusoidal source, how does the total impedance magnitude compare with R and the magnitude of Xc?

Introduction / Context: Series RC circuits exhibit a total impedance formed by combining resistance and capacitive reactance at right angles in the complex plane. Understanding the geometric (phasor) relationship clarifies why the impedance does not simply add arithmetically. Given Data / Assumptions: Components in series: resistor R and capacitor with reactance Xc (magnitude). Sinusoidal steady state at angular frequency ω. Impedance magnitude is sought, not the complex form. Concept / Approach: Total series impedance: Z = R − jXc. Magnitude |Z| = sqrt(R^2 + Xc^2). Since R and Xc combine orthogonally, |Z| is strictly greater than each individual magnitude but strictly less than the arithmetic sum R + Xc. Step-by-Step Solution: Write complex form: Z = R + (−jXc).Compute magnitude: |Z| = sqrt(R^2 + Xc^2).Compare: |Z| > max(R, Xc) and |Z| < R + Xc.Therefore, the precise description is “greater than either but less than their sum.” Verification / Alternative check: Numerical example: R = 3 Ω, Xc = 4 Ω ⇒ |Z| = 5 Ω which is greater than 4 and 3, but less than 3 + 4 = 7. Why Other Options Are Wrong: Greater than sum / equal to sum: would require colinear vectors, not orthogonal reactance.“Less than the sum” alone is true but incomplete; option (c) gives the full correct relationship.None: incorrect since (c) is exact. Common Pitfalls: Adding magnitudes arithmetically; ignoring the 90-degree phase between R and Xc; confusing series RC with parallel behavior. Final Answer: The impedance is greater than either the resistance or the capacitive reactance but less than their sum

Q: At room temperature, an intrinsic (pure) semiconductor contains what relative amounts of free carriers?

Introduction / Context: Carrier concentrations in semiconductors determine conductivity. Intrinsic semiconductors are undoped crystals (e.g., pure silicon or germanium) in which thermal energy alone generates carriers. Understanding these baseline concentrations is essential before studying doping and device behavior. Given Data / Assumptions: Material is intrinsic (no donors or acceptors). Temperature is approximately room temperature. Carrier types are electrons (in the conduction band) and holes (in the valence band). Concept / Approach: In intrinsic material, electron concentration n equals hole concentration p (n = p = n_i). The value of n_i at room temperature is modest (e.g., for silicon ~10^10 cm^-3), far less than atomic density, hence we describe the amount of carriers as “a few” relative to metals. Both species are present in equal numbers because every thermally excited electron leaves behind a hole. Step-by-Step Solution: Recognize intrinsic condition: no dopant imbalance.Apply relation: n = p = n_i.Interpret magnitude: n_i is small compared to metals; thus “a few” of each carrier type are present. Verification / Alternative check: Compare to doped semiconductors where n ≠ p; doping raises one carrier type dramatically while reducing the other via mass-action law n * p = n_i^2. Why Other Options Are Wrong: Many holes or many electrons: describes heavily doped p-type or n-type, not intrinsic.No holes: impossible at nonzero temperature because thermal generation creates electron-hole pairs. Common Pitfalls: Assuming “intrinsic” means zero carriers; forgetting that both electrons and holes exist in equal amounts in pure material. Final Answer: a few free electrons and holes

Q: An audio transformer has a turns ratio Np:Ns = 9:1 (primary to secondary). What is its impedance ratio Zp:Zs?

Introduction / Context: Transformers scale both voltage and impedance. The impedance seen at one winding due to a load on the other is related to the square of the turns ratio. This property is widely used to match speakers to amplifiers and to optimize power transfer. Given Data / Assumptions: Turns ratio Np:Ns = 9:1. We want Zp:Zs, the impedance ratio referred from secondary to primary. Ideal transformer model (lossless, perfect coupling) for the relationship. Concept / Approach: Impedance transformation follows Zp/Zs = (Np/Ns)^2. With Np/Ns = 9, square to obtain the impedance ratio. This means a 1 Ω load on the secondary appears as 81 Ω at the primary. Step-by-Step Solution: Compute turns ratio a = Np/Ns = 9.Apply formula: Zp/Zs = a^2.Calculate: a^2 = 9^2 = 81. Verification / Alternative check: Voltage scales by 9, current scales by 1/9, so impedance (V/I) scales by 9 / (1/9) = 81, confirming the square law. Why Other Options Are Wrong: 85, 6, 9: do not follow the square-of-turns rule for 9:1.None of the above: incorrect because 81 is correct. Common Pitfalls: Using the turns ratio directly instead of squaring; mixing up primary/secondary order leading to inversion. Final Answer: 81

Q: Kirchhoff’s Current Law (KCL): Which statement correctly expresses KCL at a circuit node (junction)?

Introduction / Context: Kirchhoff’s Current Law is a direct statement of charge conservation at a junction. It is fundamental to nodal analysis and applies regardless of the circuit’s complexity, provided the lumped-element model is valid. Given Data / Assumptions: We consider a single node (junction of elements). Currents are signed by direction (entering positive, leaving negative, or vice versa). No charge storage at the node under steady-state lumped assumptions. Concept / Approach: KCL states: ΣI_node = 0. Equivalently, total current entering equals total current leaving. This is a formal expression of conservation of charge—charge cannot accumulate indefinitely at a node in steady state. Step-by-Step Solution: Define reference directions for all branch currents at the node.Sum currents with sign according to direction.Set the algebraic sum equal to zero to form node equations. Verification / Alternative check: In nodal analysis, each node equation is built from KCL; solving the resulting linear system yields node voltages and branch currents, validating the law numerically in countless examples. Why Other Options Are Wrong: Proportional current–resistance statement: misstates Ohm’s law (current is proportional to voltage, inversely to resistance).Loop statement: belongs to KVL, not KCL.Total current less than smallest current: not a law and generally false. Common Pitfalls: Sign errors when summing currents; confusing node equations with loop equations; forgetting displacement current effects at very high frequencies (beyond lumped model scope). Final Answer: The algebraic sum of currents entering and leaving a point is equal to zero

Q: Capacitive reactance current calculation: What RMS current flows through a 0.02 μF capacitor connected to a 12 V (RMS), 100 Hz AC source?

Introduction / Context: For sinusoidal excitation, the current through a capacitor leads the voltage by 90 degrees and its magnitude depends on frequency and capacitance. Designers often use the simple product formula I = 2 * π * f * C * V to estimate AC capacitor current. Given Data / Assumptions: C = 0.02 μF = 0.02 × 10^-6 F = 2 × 10^-8 F. V_RMS = 12 V. Frequency f = 100 Hz. Sine wave steady state. Concept / Approach: For a capacitor, the current magnitude is I = V * ω * C, where ω = 2 * π * f. Using RMS values for a sinusoid yields the RMS current. This avoids computing capacitive reactance first, though Xc = 1 / (2 * π * f * C) can be used equivalently with I = V / Xc. Step-by-Step Solution: Compute ω = 2 * π * f = 2 * π * 100 ≈ 628.318 rad/s.Multiply by C: ω * C ≈ 628.318 * 2 × 10^-8 ≈ 1.2566 × 10^-5.Multiply by V: I = 12 * 1.2566 × 10^-5 ≈ 1.508 × 10^-4 A.Convert to mA: 1.508 × 10^-4 A ≈ 0.151 mA. Verification / Alternative check: Compute Xc = 1 / (2 * π * f * C) ≈ 1 / (628.318 * 2e-8) ≈ 79.6 kΩ; then I = V / Xc = 12 / 79.6k ≈ 0.151 mA, consistent. Why Other Options Are Wrong: 157 mA and 2.02 A: orders of magnitude too large; likely confusion of units.0.995 mA: would require a much larger capacitance or frequency.None: incorrect because 0.151 mA matches the calculation. Common Pitfalls: Misplacing decimal when converting μF to F; forgetting to use RMS voltage; mixing up radians per second with hertz. Final Answer: 0.151 mA

Q: Charge transport in semiconductors: How many types of current flow mechanisms exist in a semiconductor crystal?

Introduction / Context: Semiconductors conduct electricity via mobile charge carriers. Understanding the types of carriers and their motions is fundamental to diodes, transistors, and integrated circuits. Given Data / Assumptions: Material is a semiconductor (e.g., silicon or germanium). We consider intrinsic and doped conditions in general. We count distinct carrier types contributing to conduction. Concept / Approach: There are two carrier types: electrons (negative charge) and holes (effective positive charge). Both can drift under an electric field and diffuse under concentration gradients, forming the two fundamental current mechanisms in semiconductors. Step-by-Step Solution: Identify carrier species: electrons and holes.Recognize both participate in conduction depending on doping and bias.Conclude there are exactly two types of charge carriers and hence two forms of current flow. Verification / Alternative check: In n-type material electrons dominate; in p-type material holes dominate; in intrinsic silicon both are present equally at room temperature. Device equations (e.g., diode equation) inherently include both carrier contributions. Why Other Options Are Wrong: 0 or 1: contradicts well-established two-carrier model.4: no standard model supports four distinct carrier types in elemental semiconductors. Common Pitfalls: Confusing current carriers with mechanisms like drift and diffusion (which are processes, not new carrier species); counting ions in solids, which are not mobile in typical semiconductor crystals. Final Answer: 2

Q: Atomic structure of silicon: How many protons are present in the nucleus of a silicon (Si) atom?

Introduction / Context: The number of protons in an atom’s nucleus defines its atomic number and uniquely identifies the element. Silicon is the fundamental material of modern electronics, so recalling its atomic number helps contextualize doping levels, valence electrons, and periodic table placement. Given Data / Assumptions: Element: silicon (chemical symbol Si). Atomic number equals number of protons. Standard periodic table conventions apply. Concept / Approach: Atomic number Z is the count of protons in the nucleus. For silicon, Z = 14. This also implies 14 electrons in a neutral atom and a valence shell configuration that explains its tetravalent bonding and semiconductor behavior. Step-by-Step Solution: Identify silicon on the periodic table: period 3, group 14.Read atomic number Z = 14.Conclude the nucleus contains 14 protons. Verification / Alternative check: Chemical behavior (four valence electrons) and common isotopes (e.g., Si-28, Si-29, Si-30) are consistent with Z = 14; isotopes vary in neutrons, not protons. Why Other Options Are Wrong: 4: corresponds to Be (beryllium).29: corresponds to Cu (copper).48: corresponds to Cd (cadmium).None of the above: incorrect because 14 is correct. Common Pitfalls: Confusing mass number (protons + neutrons) with atomic number; mixing silicon with other group-14 elements (C=6, Ge=32, Sn=50, Pb=82). Final Answer: 14

Question 1

Series capacitors: what is the correct statement about the equivalent capacitance of a series combination of two or more capacitors?

Accepted Answer

Introduction / Context: Designers often place capacitors in series to increase voltage rating or to achieve a specific, smaller equivalent capacitance. Understanding how series combinations behave prevents mistakes in timing circuits, filters, and power electronics where precise capacitance and voltage distribution matter. Given Data / Assumptions: Two or more ideal capacitors are connected in series. Leakage and tolerance are ignored for the conceptual rule. We focus on the magnitude of equivalent capacitance C_eq. Concept / Approach: For capacitors in series, charge on each capacitor is equal in magnitude, and voltages add. The reciprocal of the equivalent capacitance equals the sum of reciprocals: 1/C_eq = 1/C_1 + 1/C_2 + … Because adding positive reciprocals yields a larger denominator, C_eq must be less than the smallest individual capacitor. This mirrors the dual behavior of resistors (resistors in parallel are less than the smallest resistor). Step-by-Step Solution: Write the series formula: 1/C_eq = Σ (1/C_i).Observe that Σ (1/C_i) > 1/C_min for any set with more than one element.Therefore 1/C_eq > 1/C_min → C_eq < C_min.Conclude: C_eq is less than the smallest capacitor value in the series chain. Verification / Alternative check: Example: C_1 = 4 µF, C_2 = 6 µF → 1/C_eq = 1/4 + 1/6 = 5/12 → C_eq = 12/5 = 2.4 µF, which is less than 4 µF (the smaller of the two), confirming the rule. Why Other Options Are Wrong: Option A mixes capacitance with reactance and is dimensionally incorrect. Option B describes parallel capacitors, not series. Option C is a general definition of impedance from Ohm’s law and does not specifically characterize series capacitance. “None” is wrong because a correct statement exists. Common Pitfalls: Forgetting to include voltage balancing resistors for high-voltage series stacks; ignoring tolerance and leakage that cause unequal voltage sharing across series capacitors. Final Answer: less than the value of the smallest capacitor

Question 2

Fundamentals of materials: what is the essential difference between an electrical conductor and an insulator in terms of allowing current flow?

Accepted Answer

Introduction / Context: Choosing wiring, substrates, and enclosures requires recognizing which materials conduct electricity and which resist it. The microscopic basis for conduction is the availability of mobile charge carriers (free electrons or holes) and the band structure of the material. This question asks for the practical, macroscopic distinction relevant to circuit design and safety. Given Data / Assumptions: We focus on DC/low-frequency conduction in solids. Conductor examples: copper, aluminum; insulator examples: glass, PTFE. Current flow refers to ease of carrier motion through the material. Concept / Approach: Metals have overlapping or partially filled bands, providing many free electrons, so resistivity is low and current flows readily. Insulators have a large band gap; at ordinary temperatures they lack sufficient carriers, leading to extremely high resistivity and negligible current. Semiconductors sit between these extremes, with carrier populations controllable via doping and temperature. Step-by-Step Solution: Identify the property that governs current flow: density and mobility of carriers.Conductor: high carrier density → low resistivity → easy current flow.Insulator: few carriers → high resistivity → difficult current flow.Select the option describing this practical difference. Verification / Alternative check: Compare resistivities: copper ~1.7e-8 Ω·m vs glass ~10^10–10^14 Ω·m. Orders of magnitude difference confirm that conductors allow far easier current flow than insulators. Why Other Options Are Wrong: B reverses the carrier picture; C contradicts material reality; D dismisses intrinsic properties—usage cannot turn an insulator into a conductor without altering conditions or structure. “None” is wrong because option A states the correct distinction. Common Pitfalls: Ignoring temperature dependence; assuming all nonmetals are perfect insulators; forgetting that moisture or contamination can reduce insulation resistance drastically. Final Answer: A conductor allows current to flow much easier than an insulator does

Question 3

Finding Thevenin equivalent: to determine the Thevenin open-circuit voltage V_th seen at a pair of terminals, what should you do with the load connected to those terminals?

Accepted Answer

Introduction / Context: Thevenin equivalents simplify complex linear circuits into a single voltage source V_th in series with a resistance R_th as seen from two terminals. The first step is to find V_th, the open-circuit voltage at those terminals. Knowing the correct measurement condition prevents errors when characterizing sources and interconnections. Given Data / Assumptions: We are working with a linear circuit of independent/dependent sources and resistors. The load is externally connected to the terminals of interest. The goal is to find V_th, the open-circuit terminal voltage. Concept / Approach: By definition, V_th is the terminal voltage with no load attached, i.e., under open-circuit conditions so that load current is zero. Removing (opening) the load ensures that any voltage drop across internal Thevenin resistance is due only to internal network behavior, not to load current. Only after V_th is found do we compute R_th (by source deactivation or by measuring the short-circuit current and using R_th = V_th / I_sc). Step-by-Step Solution: Disconnect the load → open-circuit the terminals.Calculate or measure the resulting terminal voltage; this is V_th.Optionally, find I_sc by shorting the terminals and computing current, then get R_th = V_th / I_sc.Reattach the load to use the Thevenin model for analysis. Verification / Alternative check: Apply to a voltage divider: With the load removed, the divider’s output equals V_th. With the load attached, output droops because current flows through R_th, justifying the open-circuit condition when finding V_th. Why Other Options Are Wrong: Shorting the load (A) gives I_sc, not V_th. Options C and D describe source deactivation for R_th by the deactivation method, not for V_th. “None” is incorrect because opening the load is exactly right. Common Pitfalls: Forgetting dependent sources must remain active when finding R_th by test-source methods; mixing up V_th and I_sc measurement conditions. Final Answer: Open the load resistor

Question 4

Magnetics terminology: which phrase best describes magnetic flux density (B) in qualitative terms for field visualization and intuition?

Accepted Answer

Introduction / Context: Magnetic flux density, denoted B and measured in teslas, quantifies how much magnetic flux passes through a given area. While rigorous definitions rely on field theory and Maxwell’s equations, a qualitative understanding using field lines is commonly used in engineering communication. This question seeks the intuitive description that aligns best with B. Given Data / Assumptions: We are discussing static or slowly varying magnetic fields for intuition. Field lines are a visualization tool; actual fields are continuous vectors. B relates to flux per unit area: B = Φ / A when uniformly distributed. Concept / Approach: Magnetic flux density represents how “concentrated” magnetic flux is in space. Where field lines are drawn closer together, B is larger; where they spread apart, B is smaller. This aligns with practical design in transformers and motors, where core cross-sectional area and flux dictate B to avoid saturation. Step-by-Step Solution: Recall definition: B measures magnetic flux per unit area.Interpret on field-line drawings: dense clusters of lines indicate higher B.Match wording: “concentration of lines of magnetic force.”Select option A. Verification / Alternative check: In a transformer core, increasing flux Φ at fixed cross-sectional area A increases B; alternatively, reducing A increases B for the same Φ. Designers choose core sizes to cap B below material saturation (e.g., 1.2–1.7 T for silicon steel), consistent with the “concentration” idea. Why Other Options Are Wrong: B refers to a rate-of-change concept more relevant to induced voltage (Faraday’s law), not flux density definition. C resembles reluctance or magnetic circuit opposition, not B. D vaguely describes a cause of field lines but does not define B. “None” is incorrect since A expresses the intuitive meaning well. Common Pitfalls: Taking field lines as literal objects; confusing B (tesla) with H (ampere per meter) or reluctance; forgetting that B depends on both excitation and material permeability. Final Answer: The concentration of lines of magnetic force

Question 5

Ideal transformer power transfer (self-contained repair): Assume the transformer discussed earlier delivers 100 W of input power at its primary winding. If the transformer is considered 100% efficient (no copper loss, no core loss, and no leakage), …

Accepted Answer

Introduction / Context: An ideal transformer is a theoretical model used in basic electrical engineering. It assumes perfect magnetic coupling, zero winding resistance, and no core losses. Under these assumptions, all input power at the primary is transferred to the secondary. This question applies that ideal-energy-conservation concept directly to determine the secondary power from a known primary power. Given Data / Assumptions: Primary input power = 100 W (explicitly stated to repair the incomplete cross-reference). Efficiency = 100% (ideal transformer: no losses). No need for turns ratio, voltages, or currents since we compare total power. Concept / Approach: For an ideal transformer, power_in = power_out. While the voltage and current values change according to the turns ratio (V scales with turns ratio, I scales inversely), their product (P = V * I) remains the same when losses are zero. Therefore, secondary power equals primary power. Step-by-Step Solution: Define efficiency: η = P_out / P_in.Set η = 1.0 (100%).Compute P_out = η * P_in = 1.0 * 100 W.Therefore, P_out = 100 W at the secondary. Verification / Alternative check: If a turns ratio changed voltage by factor a and current by 1/a, then P_out = (a * V_in) * (I_in / a) = V_in * I_in = P_in, confirming conservation in the ideal case. Why Other Options Are Wrong: 200 W, 1000 W: imply power gain, impossible without an external energy source.20 W: implies losses or regulation to only 20%—contradicts the 100% efficiency premise.None of the above: incorrect because 100 W is valid. Common Pitfalls: Confusing voltage/current transformation with power amplification; forgetting that real transformers are less than 100% efficient (typically 95–99+%), but the ideal model uses 100% for teaching and quick estimation. Final Answer: 100 W

Question 6

A Zener diode has a specified Zener voltage of 10 V and conducts a current of 20 mA in regulation. What is the power dissipation in the device?

Accepted Answer

Introduction / Context: Zener diodes are used for voltage regulation by operating in reverse breakdown at approximately constant voltage. Knowing the Zener voltage and current allows direct computation of power dissipation, which is critical for selecting an adequate power rating and heat management. Given Data / Assumptions: Zener voltage V_Z = 10 V. Zener current I_Z = 20 mA = 0.02 A. Steady-state operation within safe breakdown region. Concept / Approach: Device power dissipation is P = V * I. For a Zener in regulation, the voltage across the device is approximately V_Z while the current is I_Z. Multiply to find the dissipation in watts, then convert to milliwatts if convenient. Step-by-Step Solution: Use formula: P = V_Z * I_Z.Substitute: P = 10 V * 0.02 A.Compute: P = 0.2 W.Convert: 0.2 W = 200 mW. Verification / Alternative check: Quick mental math: 10 * 2 = 20; place decimal for 0.02 A gives 0.2 W = 200 mW, consistent. Why Other Options Are Wrong: 300 mW: would require 30 mA at 10 V.20 mW or 10 mW: far too low for the stated voltage and current.None of the above: incorrect because 200 mW is exact. Common Pitfalls: Confusing milliamps and amps when multiplying; ignoring the device power rating (must exceed calculated dissipation with margin). Final Answer: 200 mW

Question 7

Kirchhoff’s Voltage Law (KVL): Which statement correctly expresses KVL for any closed loop in an electrical network?

Accepted Answer

Introduction / Context: Kirchhoff’s laws are foundational for circuit analysis. Kirchhoff’s Voltage Law (KVL) applies energy conservation to a closed loop: as you traverse a loop, rises and drops in potential must balance out to zero. This law is independent of component details and holds for lumped, time-invariant circuits. Given Data / Assumptions: We consider closed loops in a lumped circuit. Voltages are taken with sign (algebraic sum). Steady-state or quasi-static conditions where lumped-parameter assumptions are valid. Concept / Approach: KVL states: ΣV_loop = 0. Practically, the sum of source rises equals the sum of component drops around any loop. This is a direct application of energy conservation—returning to the starting node leaves net energy change at zero. Step-by-Step Solution: Define a loop and a traversal direction.Add signed voltage rises and drops encountered.Set the algebraic sum equal to zero: ΣV = 0.Use this to solve for unknown voltages or currents via Ohm’s law relationships. Verification / Alternative check: Apply to a simple source-resistor loop: V_source − I*R = 0 ⇒ I = V_source / R, which matches Ohm’s law. Why Other Options Are Wrong: Parallel circuit statement: unrelated to KVL and not generally true.Proportional voltage drop: this is Ohm’s law, not KVL.Node statement: that is Kirchhoff’s Current Law (KCL), not KVL. Common Pitfalls: Mixing KVL and KCL; neglecting polarity when summing voltages; forgetting that induced emf or time-varying fields can require careful treatment. Final Answer: The algebraic sum of voltages in a loop is equal to zero

Question 8

For a series RC circuit driven by a sinusoidal source, how does the total impedance magnitude compare with R and the magnitude of Xc?

Accepted Answer

Introduction / Context: Series RC circuits exhibit a total impedance formed by combining resistance and capacitive reactance at right angles in the complex plane. Understanding the geometric (phasor) relationship clarifies why the impedance does not simply add arithmetically. Given Data / Assumptions: Components in series: resistor R and capacitor with reactance Xc (magnitude). Sinusoidal steady state at angular frequency ω. Impedance magnitude is sought, not the complex form. Concept / Approach: Total series impedance: Z = R − jXc. Magnitude |Z| = sqrt(R^2 + Xc^2). Since R and Xc combine orthogonally, |Z| is strictly greater than each individual magnitude but strictly less than the arithmetic sum R + Xc. Step-by-Step Solution: Write complex form: Z = R + (−jXc).Compute magnitude: |Z| = sqrt(R^2 + Xc^2).Compare: |Z| > max(R, Xc) and |Z| < R + Xc.Therefore, the precise description is “greater than either but less than their sum.” Verification / Alternative check: Numerical example: R = 3 Ω, Xc = 4 Ω ⇒ |Z| = 5 Ω which is greater than 4 and 3, but less than 3 + 4 = 7. Why Other Options Are Wrong: Greater than sum / equal to sum: would require colinear vectors, not orthogonal reactance.“Less than the sum” alone is true but incomplete; option (c) gives the full correct relationship.None: incorrect since (c) is exact. Common Pitfalls: Adding magnitudes arithmetically; ignoring the 90-degree phase between R and Xc; confusing series RC with parallel behavior. Final Answer: The impedance is greater than either the resistance or the capacitive reactance but less than their sum

Question 9

At room temperature, an intrinsic (pure) semiconductor contains what relative amounts of free carriers?

Accepted Answer

Introduction / Context: Carrier concentrations in semiconductors determine conductivity. Intrinsic semiconductors are undoped crystals (e.g., pure silicon or germanium) in which thermal energy alone generates carriers. Understanding these baseline concentrations is essential before studying doping and device behavior. Given Data / Assumptions: Material is intrinsic (no donors or acceptors). Temperature is approximately room temperature. Carrier types are electrons (in the conduction band) and holes (in the valence band). Concept / Approach: In intrinsic material, electron concentration n equals hole concentration p (n = p = n_i). The value of n_i at room temperature is modest (e.g., for silicon ~10^10 cm^-3), far less than atomic density, hence we describe the amount of carriers as “a few” relative to metals. Both species are present in equal numbers because every thermally excited electron leaves behind a hole. Step-by-Step Solution: Recognize intrinsic condition: no dopant imbalance.Apply relation: n = p = n_i.Interpret magnitude: n_i is small compared to metals; thus “a few” of each carrier type are present. Verification / Alternative check: Compare to doped semiconductors where n ≠ p; doping raises one carrier type dramatically while reducing the other via mass-action law n * p = n_i^2. Why Other Options Are Wrong: Many holes or many electrons: describes heavily doped p-type or n-type, not intrinsic.No holes: impossible at nonzero temperature because thermal generation creates electron-hole pairs. Common Pitfalls: Assuming “intrinsic” means zero carriers; forgetting that both electrons and holes exist in equal amounts in pure material. Final Answer: a few free electrons and holes

Question 10

An audio transformer has a turns ratio Np:Ns = 9:1 (primary to secondary). What is its impedance ratio Zp:Zs?

Accepted Answer

Introduction / Context: Transformers scale both voltage and impedance. The impedance seen at one winding due to a load on the other is related to the square of the turns ratio. This property is widely used to match speakers to amplifiers and to optimize power transfer. Given Data / Assumptions: Turns ratio Np:Ns = 9:1. We want Zp:Zs, the impedance ratio referred from secondary to primary. Ideal transformer model (lossless, perfect coupling) for the relationship. Concept / Approach: Impedance transformation follows Zp/Zs = (Np/Ns)^2. With Np/Ns = 9, square to obtain the impedance ratio. This means a 1 Ω load on the secondary appears as 81 Ω at the primary. Step-by-Step Solution: Compute turns ratio a = Np/Ns = 9.Apply formula: Zp/Zs = a^2.Calculate: a^2 = 9^2 = 81. Verification / Alternative check: Voltage scales by 9, current scales by 1/9, so impedance (V/I) scales by 9 / (1/9) = 81, confirming the square law. Why Other Options Are Wrong: 85, 6, 9: do not follow the square-of-turns rule for 9:1.None of the above: incorrect because 81 is correct. Common Pitfalls: Using the turns ratio directly instead of squaring; mixing up primary/secondary order leading to inversion. Final Answer: 81

Question 11

Kirchhoff’s Current Law (KCL): Which statement correctly expresses KCL at a circuit node (junction)?

Accepted Answer

Introduction / Context: Kirchhoff’s Current Law is a direct statement of charge conservation at a junction. It is fundamental to nodal analysis and applies regardless of the circuit’s complexity, provided the lumped-element model is valid. Given Data / Assumptions: We consider a single node (junction of elements). Currents are signed by direction (entering positive, leaving negative, or vice versa). No charge storage at the node under steady-state lumped assumptions. Concept / Approach: KCL states: ΣI_node = 0. Equivalently, total current entering equals total current leaving. This is a formal expression of conservation of charge—charge cannot accumulate indefinitely at a node in steady state. Step-by-Step Solution: Define reference directions for all branch currents at the node.Sum currents with sign according to direction.Set the algebraic sum equal to zero to form node equations. Verification / Alternative check: In nodal analysis, each node equation is built from KCL; solving the resulting linear system yields node voltages and branch currents, validating the law numerically in countless examples. Why Other Options Are Wrong: Proportional current–resistance statement: misstates Ohm’s law (current is proportional to voltage, inversely to resistance).Loop statement: belongs to KVL, not KCL.Total current less than smallest current: not a law and generally false. Common Pitfalls: Sign errors when summing currents; confusing node equations with loop equations; forgetting displacement current effects at very high frequencies (beyond lumped model scope). Final Answer: The algebraic sum of currents entering and leaving a point is equal to zero

Question 12

Capacitive reactance current calculation: What RMS current flows through a 0.02 μF capacitor connected to a 12 V (RMS), 100 Hz AC source?

Accepted Answer

Introduction / Context: For sinusoidal excitation, the current through a capacitor leads the voltage by 90 degrees and its magnitude depends on frequency and capacitance. Designers often use the simple product formula I = 2 * π * f * C * V to estimate AC capacitor current. Given Data / Assumptions: C = 0.02 μF = 0.02 × 10^-6 F = 2 × 10^-8 F. V_RMS = 12 V. Frequency f = 100 Hz. Sine wave steady state. Concept / Approach: For a capacitor, the current magnitude is I = V * ω * C, where ω = 2 * π * f. Using RMS values for a sinusoid yields the RMS current. This avoids computing capacitive reactance first, though Xc = 1 / (2 * π * f * C) can be used equivalently with I = V / Xc. Step-by-Step Solution: Compute ω = 2 * π * f = 2 * π * 100 ≈ 628.318 rad/s.Multiply by C: ω * C ≈ 628.318 * 2 × 10^-8 ≈ 1.2566 × 10^-5.Multiply by V: I = 12 * 1.2566 × 10^-5 ≈ 1.508 × 10^-4 A.Convert to mA: 1.508 × 10^-4 A ≈ 0.151 mA. Verification / Alternative check: Compute Xc = 1 / (2 * π * f * C) ≈ 1 / (628.318 * 2e-8) ≈ 79.6 kΩ; then I = V / Xc = 12 / 79.6k ≈ 0.151 mA, consistent. Why Other Options Are Wrong: 157 mA and 2.02 A: orders of magnitude too large; likely confusion of units.0.995 mA: would require a much larger capacitance or frequency.None: incorrect because 0.151 mA matches the calculation. Common Pitfalls: Misplacing decimal when converting μF to F; forgetting to use RMS voltage; mixing up radians per second with hertz. Final Answer: 0.151 mA

Question 13

Charge transport in semiconductors: How many types of current flow mechanisms exist in a semiconductor crystal?

Accepted Answer

Introduction / Context: Semiconductors conduct electricity via mobile charge carriers. Understanding the types of carriers and their motions is fundamental to diodes, transistors, and integrated circuits. Given Data / Assumptions: Material is a semiconductor (e.g., silicon or germanium). We consider intrinsic and doped conditions in general. We count distinct carrier types contributing to conduction. Concept / Approach: There are two carrier types: electrons (negative charge) and holes (effective positive charge). Both can drift under an electric field and diffuse under concentration gradients, forming the two fundamental current mechanisms in semiconductors. Step-by-Step Solution: Identify carrier species: electrons and holes.Recognize both participate in conduction depending on doping and bias.Conclude there are exactly two types of charge carriers and hence two forms of current flow. Verification / Alternative check: In n-type material electrons dominate; in p-type material holes dominate; in intrinsic silicon both are present equally at room temperature. Device equations (e.g., diode equation) inherently include both carrier contributions. Why Other Options Are Wrong: 0 or 1: contradicts well-established two-carrier model.4: no standard model supports four distinct carrier types in elemental semiconductors. Common Pitfalls: Confusing current carriers with mechanisms like drift and diffusion (which are processes, not new carrier species); counting ions in solids, which are not mobile in typical semiconductor crystals. Final Answer: 2

Question 14

Atomic structure of silicon: How many protons are present in the nucleus of a silicon (Si) atom?

Accepted Answer

Introduction / Context: The number of protons in an atom’s nucleus defines its atomic number and uniquely identifies the element. Silicon is the fundamental material of modern electronics, so recalling its atomic number helps contextualize doping levels, valence electrons, and periodic table placement. Given Data / Assumptions: Element: silicon (chemical symbol Si). Atomic number equals number of protons. Standard periodic table conventions apply. Concept / Approach: Atomic number Z is the count of protons in the nucleus. For silicon, Z = 14. This also implies 14 electrons in a neutral atom and a valence shell configuration that explains its tetravalent bonding and semiconductor behavior. Step-by-Step Solution: Identify silicon on the periodic table: period 3, group 14.Read atomic number Z = 14.Conclude the nucleus contains 14 protons. Verification / Alternative check: Chemical behavior (four valence electrons) and common isotopes (e.g., Si-28, Si-29, Si-30) are consistent with Z = 14; isotopes vary in neutrons, not protons. Why Other Options Are Wrong: 4: corresponds to Be (beryllium).29: corresponds to Cu (copper).48: corresponds to Cd (cadmium).None of the above: incorrect because 14 is correct. Common Pitfalls: Confusing mass number (protons + neutrons) with atomic number; mixing silicon with other group-14 elements (C=6, Ge=32, Sn=50, Pb=82). Final Answer: 14

Question 15

In basic transformer theory, a step-down power transformer shows 50 V at its secondary when 150 V is applied at the primary. What is the turns ratio (secondary turns : primary turns) implied by this voltage relationship for an ideal transformer?

Accepted Answer

Introduction / Context: Transformers relate input (primary) and output (secondary) voltages to the ratio of turns on their windings. This question checks your grasp of the fundamental ideal-transformer relationship between voltage and turns, often used for quick sizing of step-down and step-up designs. Given Data / Assumptions: Primary voltage Vp = 150 V (applied). Secondary voltage Vs = 50 V (measured). Assume an ideal transformer (no winding resistance, core loss, or leakage). Concept / Approach: The ideal transformer equation for voltages is Vs / Vp = Ns / Np, where Ns and Np are numbers of secondary and primary turns respectively. Power conservation and magnetizing coupling underpin this relation in the ideal model. Step-by-Step Solution: 1) Write the ideal transformer formula: Vs / Vp = Ns / Np.2) Substitute values: 50 / 150 = Ns / Np.3) Reduce the fraction: 50 / 150 = 1 / 3.4) Therefore Ns : Np = 1 : 3, i.e., the turns ratio is 1/3 (secondary to primary). Verification / Alternative check: A step-down by a factor of 3 in voltage (150 V to 50 V) must correspond to one-third as many turns on the secondary as on the primary in the ideal case. Why Other Options Are Wrong: 1/4: Would yield 150 * (1/4) = 37.5 V, not 50 V.2 or 3: These imply step-up, inconsistent with the observed step-down.None of the above: Incorrect because 1/3 matches perfectly. Common Pitfalls: Mixing up the order of the ratio (primary:secondary vs secondary:primary) and forgetting to simplify 50/150 to 1/3 are common mistakes. Final Answer: 1/3.

Question 16

In magnetic circuit analysis, which property is most directly analogous to electrical resistance in an electric circuit, considering how it impedes magnetic flux?

Accepted Answer

Introduction / Context: Magnetic circuits can be compared to electrical circuits using helpful analogies. The idea is to map magnetic quantities (magnetomotive force, flux, and material properties) to electrical quantities (voltage, current, and resistance) to aid intuition and design. Given Data / Assumptions: We use standard magnetic–electrical analogies. Idealized, linear materials are assumed for the basic comparison. No fringing or leakage is considered in the core analogy. Concept / Approach: In the common analogy: magnetomotive force (F) corresponds to voltage (V), magnetic flux (phi) corresponds to current (I), and reluctance (R_m) corresponds to resistance (R). Thus F = phi * R_m parallels V = I * R. Permeance is the inverse of reluctance (like conductance), and permeability is a material parameter that affects reluctance but is not the direct analog of resistance. Step-by-Step Solution: 1) Recall analogy: F ↔ V, phi ↔ I, R_m ↔ R.2) By definition, reluctance R_m impedes flux phi for a given F.3) Therefore, reluctance is directly comparable to electrical resistance. Verification / Alternative check: Permeance P_m = 1 / R_m maps to conductance G = 1 / R; permeability mu contributes to R_m but is not the analog itself. Why Other Options Are Wrong: Permeability: Material property influencing reluctance, not the analog to resistance.Permeance: Analog of conductance, not resistance.Retentivity: Relates to residual magnetism, not circuit opposition.No valid comparison: The reluctance–resistance analogy is standard. Common Pitfalls: Confusing permeability with permeance, or mixing up which quantity is the inverse in the analogy. Final Answer: Reluctance.

Question 17

For an inductor in AC analysis, how does inductive reactance vary with the operating frequency of the applied sinusoidal voltage?

Accepted Answer

Introduction / Context: Inductive reactance captures how an inductor resists changes in current when excited by alternating current. Understanding its dependence on frequency is crucial for filter design, impedance matching, and transient response prediction. Given Data / Assumptions: Sine-wave excitation (steady-state AC). Ideal inductor model. Angular frequency relation omega = 2 * pi * f. Concept / Approach: The formula for inductive reactance is X_L = 2 * pi * f * L. This shows a direct proportionality: doubling frequency doubles X_L. At dc (f = 0), X_L = 0, meaning the inductor behaves like a short in steady state for pure dc. Step-by-Step Solution: 1) Use X_L = 2 * pi * f * L.2) Observe that X_L is proportional to f.3) Conclude that as f increases, X_L increases linearly. Verification / Alternative check: At dc, X_L = 0, confirming option B is false and reinforcing the proportional trend with frequency for nonzero f. Why Other Options Are Wrong: Decreases with frequency: Opposite of the formula’s prediction.Maximum at dc: Incorrect; it is zero at dc.No relationship: There is a clear linear relationship.None of the above: Option stating increase with frequency is correct. Common Pitfalls: Confusing capacitive reactance, which decreases with frequency, with inductive reactance, which increases. Final Answer: inductive reactance increases with operating frequency.

Question 18

A sinusoidal voltage source has a peak (maximum) value of 50 V. What is the corresponding rms (root-mean-square) voltage for this sine wave?

Accepted Answer

Introduction / Context: Rms (root-mean-square) voltage is the effective value of a time-varying voltage, equating a sinusoidal source to a dc level that would deliver the same average power into a resistive load. Converting between peak and rms is a routine AC analysis task. Given Data / Assumptions: Peak value Vp = 50 V. Pure sinusoid (no distortion). Standard rms definition for sine waves. Concept / Approach: For a sinusoid, Vrms = Vp / sqrt(2). This comes from integrating the square of a sine wave over a full period and taking the square root of the mean. Step-by-Step Solution: 1) Use Vrms = Vp / sqrt(2).2) Substitute Vp = 50 V.3) Vrms = 50 / 1.4142 ≈ 35.36 V.4) Rounded to one decimal place, Vrms ≈ 35.4 V. Verification / Alternative check: Another common identity is Vp ≈ 1.414 * Vrms; solving gives Vrms ≈ 50 / 1.414 ≈ 35.4 V, confirming the result. Why Other Options Are Wrong: 37.4 V or 38.74 V: Not consistent with division by sqrt(2).30.4 V: Too low; implies an incorrect conversion factor.None of the above: Incorrect because 35.4 V is correct. Common Pitfalls: Confusing rms with average or peak-to-peak values; using 2 instead of sqrt(2) as the divisor is a frequent error. Final Answer: 35.4 V.

Question 19

In a transistor biased at the midpoint of its DC load line, if the device’s current gain (beta) increases while base bias remains unchanged, how does the Q-point shift along the load line?

Accepted Answer

Introduction / Context: The operating point (Q-point) of a transistor is where the device resides on its load line under quiescent (no-signal) conditions. Understanding how changes in current gain affect this point is essential for bias stability and linear amplifier design. Given Data / Assumptions: Transistor initially biased near the midpoint of the load line. Base bias is fixed (no change in bias network values). Current gain beta increases due to device variation or temperature. Concept / Approach: Collector current Ic ≈ beta * Ib (for a given base current Ib). If beta rises while Ib is constant, Ic increases. On a load line (defined by Vcc and RC), higher Ic moves the Q-point toward higher current and lower collector-emitter voltage, i.e., up the current axis toward saturation. Step-by-Step Solution: 1) Assume fixed Ib due to fixed bias network.2) Increase beta → Ic increases (Ic = beta * Ib).3) On the load line, larger Ic corresponds to a point higher on the vertical axis.4) Hence Q moves up (toward saturation), away from cutoff. Verification / Alternative check: Graphically, draw the same load line and intersect it with the new Ic for the unchanged base current; the intersection is above the previous Q-point. Why Other Options Are Wrong: Down: Would imply reduced Ic, opposite to an increase in beta.Nowhere: Ignores the dependence Ic = beta * Ib.Off the load line: DC operation must remain on the load line defined by Vcc and RC unless supply or RC changes. Common Pitfalls: Assuming feedback or emitter degeneration compensates automatically; without such stabilization, beta shifts do move the Q-point. Final Answer: up.

Question 20

In a series RL circuit driven by a sinusoidal source, which statement correctly describes the relationship between the total source voltage and the individual voltage drops across R and L?

Accepted Answer

Introduction / Context: Series RL circuits introduce phase differences: the resistor voltage is in phase with current, while the inductor voltage leads the current by 90 degrees. Understanding vector addition of these drops is central to AC circuit analysis. Given Data / Assumptions: Sinusoidal steady state. Ideal R and L elements. Phasor relationships apply. Concept / Approach: The source voltage phasor V is the vector sum of VR (in phase with I) and VL (leading I by 90 degrees). Because these phasors are orthogonal components, |V| = sqrt(VR^2 + VL^2), not VR + VL. Therefore, the magnitude of the total is less than the arithmetic sum except when one term is zero. Step-by-Step Solution: 1) Set VR = I * R, in phase with I.2) Set VL = I * X_L, leading I by 90 degrees.3) Compute |V| using |V| = sqrt(VR^2 + VL^2).4) Conclude |V| < VR + VL for nonzero VR and VL. Verification / Alternative check: Draw a right triangle with legs VR and VL; the hypotenuse (|V|) is necessarily less than their arithmetic sum. Why Other Options Are Wrong: Equal to arithmetic sum: Ignores phase; voltages are not colinear.Same amplitude and phase everywhere: False in RL; phase differs across L.Exactly 90 degrees lag: True only for pure inductors; RL phase is between 0 and 90 degrees.None of the above: Option C is correct. Common Pitfalls: Adding magnitudes directly without considering phase; confusing current-phase behavior with voltage-phase behavior. Final Answer: The total voltage is less than the arithmetic sum of the resistor and inductor voltages.

Electronic Principles Questions