In device-level electronics, a p-channel enhancement MOSFET is most similar in external function to a PNP transistor, except for which key control property at the input terminal?

Introduction / Context:
MOSFETs and BJTs are both fundamental transistor types but differ in how their inputs control conduction. Recognizing this difference guides driver design, power efficiency, and interface circuitry across analog and digital domains.

Given Data / Assumptions:

• Device: p-channel enhancement MOSFET (gate, source, drain).
• Comparison device: PNP BJT (base, emitter, collector).
• General functional analogy: high-side control in certain configurations.

Concept / Approach:
BJTs are current-controlled: base current drives collector–emitter current (Ic ≈ β * Ib). MOSFETs are voltage-controlled: gate electric field modulates channel conduction with negligible steady-state gate current (ignoring leakage and dynamic charging).

Step-by-Step Solution:

Verification / Alternative check:
Data sheets show gate leakage in nanoamp to microamp range under normal conditions, versus base currents in milliamps for BJTs at comparable collector currents.

Why Other Options Are Wrong:

• operates much faster: speed depends on technology; not a universal truth.
• considerably larger: geometry varies; not a defining distinction.
• controlled by current rather than by voltage: this describes BJTs, not MOSFETs.
• None of the above: incorrect because the voltage-control property is correct.

Common Pitfalls:
Ignoring dynamic gate charging currents and equating 'negligible' with 'zero'; real gates have capacitance that must be driven during switching.

Final Answer:
it is controlled by voltage rather than by current, so that it requires very little current at the control terminal