Memory-cell technology Which type of semiconductor memory uses a MOS capacitor as the storage element (one transistor plus capacitor per bit)?

Introduction / Context:Memory technologies differ by how each bit is stored. This affects density, speed, and controller complexity.

Given Data / Assumptions:

• Looking for the memory that uses a MOS capacitor as the actual charge-storage device.
• Common types: SRAM, DRAM, ROM, FIFO, EEPROM.

Concept / Approach:Dynamic RAM (DRAM) stores data as electric charge on a tiny capacitor controlled by a MOS transistor. Because the charge leaks over time, it must be refreshed periodically. SRAM uses cross-coupled inverters (latches) and does not require refresh while powered.

Step-by-Step Solution:Identify the memory with capacitor-based cell: DRAM.Recall characteristic: requires refresh due to leakage.Select DRAM from the list.

Verification / Alternative check:Standard texts and datasheets describe DRAM cells as 1T1C (one transistor, one capacitor).

Why Other Options Are Wrong:SRAM: latch-based, multi-transistor cell.ROM: stored via mask/programmable elements, not a dynamic capacitor cell.FIFO: first-in, first-out buffer organization, not a specific cell technology.EEPROM: electrically alterable floating-gate technology, not dynamic capacitors.

Common Pitfalls:Assuming “static” equals nonvolatile; SRAM is still volatile.

Final Answer:DRAM