SRAM vs. DRAM cell complexity — assess the statement: “An SRAM storage cell is less complex than a DRAM storage cell.”

Introduction / Context:
Static RAM (SRAM) and Dynamic RAM (DRAM) store bits using very different circuit primitives. A common learning objective is understanding why DRAM achieves higher densities than SRAM. This question tests whether SRAM cells are actually less complex than DRAM cells.

Given Data / Assumptions:

• SRAM bit cell typically uses cross-coupled inverters (latches) plus access transistors.
• DRAM bit cell typically uses one transistor and one capacitor (1T1C).
• “Complexity” here refers to device count and layout area per bit.

Concept / Approach:
An SRAM cell commonly uses six transistors (6T) in mainstream CMOS designs (two cross-coupled inverters = 4T + 2 access transistors). DRAM uses a single access transistor and a storage capacitor, so the device count and occupied area per bit are much smaller. Therefore, SRAM cells are more complex and larger than DRAM cells, enabling DRAM’s much higher bit densities but with the tradeoff of needing periodic refresh.

Step-by-Step Solution:

Verification / Alternative check:
Process technology references and memory compiler documentation consistently show SRAM occupying more area per bit and using more devices than DRAM; area and device count map directly to implementation complexity.

Why Other Options Are Wrong:

• Correct: Opposite of reality.
• Only correct for embedded memories / below 28 nm: Technology node does not invert the fundamental device-count relationship.

Common Pitfalls:
Equating access speed with simplicity; SRAM is faster but not simpler in cell design. Also, confusing peripheral circuitry (decoders, sense amps) with the cell itself.

Final Answer:
Incorrect — SRAM cells use more devices (e.g., 6T) than DRAM’s 1T1C cell and are therefore more complex.