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Field Effect Transistors (FET) problems


  • 1. In an n-channel JFET, what will happen at the pinch-off voltage?

  • Options
  • A. the value of VDS at which further increases in VDS will cause no further increase in ID
  • B. the value of VGS at which further decreases in VGS will cause no further increases in ID
  • C. the value of VDG at which further decreases in VDG will cause no further increases in ID
  • D. the value of VDS at which further increases in VGS will cause no further increases in ID
  • Discuss
  • 2. IDSS can be defined as:

  • Options
  • A. the minimum possible drain current
  • B. the maximum possible current with VGS held at ?4 V
  • C. the maximum possible current with VGS held at 0 V
  • D. the maximum drain current with the source shorted
  • Discuss
  • 3. A "U" shaped, opposite-polarity material built near a JFET-channel center is called the:

  • Options
  • A. gate
  • B. block
  • C. drain
  • D. heat sink
  • Discuss
  • 4. What is the input impedance of a common-gate configured JFET?

  • Options
  • A. very low
  • B. low
  • C. high
  • D. very high
  • Discuss
  • 5. With the E-MOSFET, when gate input voltage is zero, drain current is:

  • Options
  • A. at saturation
  • B. zero
  • C. IDSS
  • D. widening the channel
  • Discuss
  • 6. Which type of JFET bias requires a negative supply voltage?

  • Options
  • A. feedback
  • B. source
  • C. gate
  • D. voltage divider
  • Discuss
  • 7. Which component is considered to be an "OFF" device?

  • Options
  • A. transistor
  • B. JFET
  • C. D-MOSFET
  • D. E-MOSFET
  • Discuss
  • 8. When is a vertical channel E-MOSFET used?

  • Options
  • A. for high frequencies
  • B. for high voltages
  • C. for high currents
  • D. for high resistances
  • Discuss
  • 9. A very simple bias for a D-MOSFET is called:

  • Options
  • A. self biasing
  • B. gate biasing
  • C. zero biasing
  • D. voltage-divider biasing
  • Discuss

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