Curioustab
Aptitude
General Knowledge
Verbal Reasoning
Computer Science
Interview
Aptitude
General Knowledge
Verbal Reasoning
Computer Science
Interview
Materials and Components Questions
The direction of force an a conductor carrying current and lying in a magnetic field can be found by using
The real part of complex dielectric constant and tanδ for a dielectric are 2.1 and 5 x 10-4 at 100 Hz respectively. The imaginary part of dielectric constant at 100 Hz is
A single layer air cored coil has n turns and inductance L. If a new coil is formed by having 2n turns while keeping the coil length and diameter the same, the new inductance is
In anti-ferromagnetic materials, the graph of susceptibility versus temperature shows a sharp maximum at a certain temperature. This temperature is known as
When the atom of rare gas is placed in an electric field the nucleus shifts from the centre of electron cloud by an amount x. If the radius of electron cloud is R, then
The units for electric dipole moment are
For a superconductor, the relative permeability is
Assertion (A): Copper is a good conductor of electricity. Reason (R): Copper has a face centred cubic lattice.
The wavelength of light emitted by GaAs laser is 8670 x 10-10 m. If h = 6.626 x 10-34 Js, velocity of light = 3 x 108 m/s and eV = 1.602 x 10-19 J, the energy gap in GaAs is
Assertion (A): Relative permittivity is determined by the atomic structure of the material. Reason (R): Absolute permittivity is determined by the atomic structure of the material.
The core of an atom consists of
Diamagnetic materials do not have permanent magnetic dipoles.
Assertion (A): Rochelle salt and Barium titanate are both ferroelectric. Reason (R): Ferroelectric materials exhibit hysteresis effect.
If a metal specimen has n valence electrons per m3 each having charge e and mass m and t is the relaxations time, the conductivity is
Assertion (A): Intrinsic resistivity of silicon is lower than that of germanium. Reason (R): Magnitude of free electron concentration in germanium is more than that of silicon.
In a conductor the current flow is due to
Assertion (A): The equation D = ∈0∈rE is applicable only to isotropic materials. Reason (R): In polycrystalline materials, the directional effects are absent.
A dielectric of relative permittivity ∈r is subjected to a homogeneous electric field E. The dipole moment P per unit volume is given by
As per Matthiessen's rule, the total resistivity r of a conductor can be written as r = ri + aT, where ri and a are constants and T is absolute temperature. At very low temperatures
Consider the following statements An iron cored choke is non linear and passive device. A carbon resistor kept in sunlight is a time invariant and passive device. A dry cell is a time varying and active device. An air capacitor is time invariant and passive device. Of these statements
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