A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.

Q: A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.

By increasing of temperature by 10°C, I o become double so by increasing temperature 20°C, I o become 4 time than initial value... and it is 40 PA.

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By increasing of temperature by 10°C, I_o become double so by increasing temperature 20°C, I_o become 4 time than initial value... and it is 40 PA.

A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.

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