Comparison of Schottky and Ordinary Diodes: As compared to a standard p–n junction diode, which of the following statements is correct for a Schottky diode?

Introduction / Context:
Schottky diodes are majority carrier devices formed by a metal-semiconductor junction. They are optimized for fast switching and low forward voltage drop compared to ordinary diodes.

Given Data / Assumptions:

• Ordinary diode: cut-in voltage ~0.7 V (silicon).
• Schottky diode: cut-in voltage ~0.2–0.3 V.

Concept / Approach:

The key property is lower cut-in voltage, which reduces conduction losses and improves efficiency in power circuits.

Step-by-Step Solution:

Verification / Alternative check:

Datasheets confirm Schottky efficiency at low voltages, with trade-off of higher leakage.

Why Other Options Are Wrong:

• Higher cut-in: opposite of reality.
• Lower reverse current: incorrect, Schottky has higher leakage.
• Both (b) and (c): doubly false.

Common Pitfalls:

• Assuming Schottky improves all parameters — it sacrifices leakage for speed.

Final Answer:

has lower cut in voltage