Comparison of Schottky and Ordinary Diodes: As compared to a standard p–n junction diode, which of the following statements is correct for a Schottky diode?
Electronics and Communication Engineering
Electronic Devices and Circuits
Difficulty: Easy
Choose an option
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Ahas lower cut in voltage
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Bhas higher cut in voltage
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Clower reverse saturation current
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Dboth (b) and (c)
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Eboth (a) and (c)
Answer
Correct Answer: has lower cut in voltage
Explanation
Introduction / Context:Schottky diodes are majority carrier devices formed by a metal-semiconductor junction. They are optimized for fast switching and low forward voltage drop compared to ordinary diodes.
Given Data / Assumptions:
- Ordinary diode: cut-in voltage ~0.7 V (silicon).
- Schottky diode: cut-in voltage ~0.2–0.3 V.
Concept / Approach:
The key property is lower cut-in voltage, which reduces conduction losses and improves efficiency in power circuits.
Step-by-Step Solution:
Step 1: Compare cut-in voltages → Schottky ~0.3 V, PN diode ~0.7 V.Step 2: Compare reverse leakage → Schottky leakage higher, not lower.Step 3: Therefore, correct answer = lower cut in voltage.Verification / Alternative check:
Datasheets confirm Schottky efficiency at low voltages, with trade-off of higher leakage.
Why Other Options Are Wrong:
- Higher cut-in: opposite of reality.
- Lower reverse current: incorrect, Schottky has higher leakage.
- Both (b) and (c): doubly false.
Common Pitfalls:
- Assuming Schottky improves all parameters — it sacrifices leakage for speed.
Final Answer:
has lower cut in voltage