Difficulty: Easy
Correct Answer: has higher reverse saturation current and lower cut in voltage
Explanation:
Introduction / Context:Schottky diodes use a metal–semiconductor junction. Their transport and I-V characteristics differ from p-n junctions, offering low forward drop and fast switching at the expense of higher leakage.
Given Data / Assumptions:
Concept / Approach:Due to the metal–semiconductor barrier and majority-carrier conduction, Schottky diodes typically have low forward voltage (about 0.2–0.4 V) and relatively high reverse leakage compared with silicon p-n diodes (about 0.6–0.7 V forward drop, lower leakage).
Step-by-Step Solution:
Step 1: Identify forward behavior: Schottky has lower cut-in voltage.Step 2: Identify reverse behavior: Schottky has higher leakage (reverse saturation current) at a given reverse voltage.Step 3: Select the option reflecting both facts.Verification / Alternative check:
Datasheets and application notes consistently show Schottky forward drop lower than silicon p-n and leakage higher, especially at elevated temperatures.Why Other Options Are Wrong:
A: Incomplete; misses forward-voltage aspect.B: Incorrect; forward drop is not higher.D/E: Misstate one or both trends.Common Pitfalls:
Confusing Schottky with germanium p-n diodes; conflating forward drop with conduction loss only and ignoring leakage impact on efficiency.Final Answer:
has higher reverse saturation current and lower cut in voltage
Discussion & Comments