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Compared with an ordinary p-n diode, a Schottky diode exhibits which combination of reverse saturation current and cut-in voltage?

Difficulty: Easy

Correct Answer: has higher reverse saturation current and lower cut in voltage

Explanation:


Introduction / Context:
Schottky diodes use a metal–semiconductor junction. Their transport and I-V characteristics differ from p-n junctions, offering low forward drop and fast switching at the expense of higher leakage.


Given Data / Assumptions:

  • Device types: Schottky diode vs p-n diode.
  • Properties compared: reverse saturation current (leakage) and forward cut-in voltage.


Concept / Approach:
Due to the metal–semiconductor barrier and majority-carrier conduction, Schottky diodes typically have low forward voltage (about 0.2–0.4 V) and relatively high reverse leakage compared with silicon p-n diodes (about 0.6–0.7 V forward drop, lower leakage).


Step-by-Step Solution:

Step 1: Identify forward behavior: Schottky has lower cut-in voltage.Step 2: Identify reverse behavior: Schottky has higher leakage (reverse saturation current) at a given reverse voltage.Step 3: Select the option reflecting both facts.


Verification / Alternative check:

Datasheets and application notes consistently show Schottky forward drop lower than silicon p-n and leakage higher, especially at elevated temperatures.


Why Other Options Are Wrong:

A: Incomplete; misses forward-voltage aspect.B: Incorrect; forward drop is not higher.D/E: Misstate one or both trends.


Common Pitfalls:

Confusing Schottky with germanium p-n diodes; conflating forward drop with conduction loss only and ignoring leakage impact on efficiency.


Final Answer:

has higher reverse saturation current and lower cut in voltage
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