Difficulty: Easy
Correct Answer: 1 mA
Explanation:
Introduction / Context:Small-signal and bias calculations in bipolar junction transistors (BJTs) often start from the simple relationship between collector current and base current: I_C = β I_B in the forward-active region. This question asks for a direct substitution, reinforcing basic DC analysis in common-emitter configurations.
Given Data / Assumptions:
Concept / Approach:In forward-active region, collector current is proportional to base current by β_dc. The emitter current is approximately I_E ≈ (1 + β) I_B, but here only I_C is requested, so we use I_C = β_dc * I_B directly.
Step-by-Step Solution:
I_C = β_dc * I_B = 100 * 10 μA.Compute: 100 * 10 μA = 1000 μA = 1 mA.Thus, the collector current is 1 mA under the stated conditions.Verification / Alternative check:
If V_CE is sufficiently large to avoid saturation (e.g., V_CE > 0.2–0.3 V typical), the forward-active assumption holds and the relation is valid.Why Other Options Are Wrong:
10 μA: This equals I_B, which would imply β = 1 (not the given 100).100 μA or 0.5 mA: Do not satisfy the β = 100 relationship.10 mA: Would require I_B = 100 μA or β = 1000 instead.Common Pitfalls:
Confusing β with α; α ≈ β / (β + 1) is used in common-base analysis, not needed here.Final Answer:
1 mA
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