Electronic devices – Match each device to its hallmark characteristic List I (Device) A. Bipolar junction transistor (BJT) B. MOSFET C. Tunnel diode D. Zener diode List II (Characteristic) Voltage-controlled negative resistance region High current gain Voltage regulation (nearly constant reverse-breakdown voltage) Very high input impedance Choose the correct mapping.
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AA-1, B-4, C-2, D-3
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BA-2, B-4, C-1, D-3
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CA-2, B-3, C-1, D-4
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DA-1, B-3, C-2, D-4
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EA-3, B-2, C-4, D-1
Answer
Correct Answer: A-2, B-4, C-1, D-3
Explanation
Introduction / Context:Many exam items test recognition of signature traits of common devices. Correctly mapping these traits helps you rapidly choose the right component in analog design and troubleshooting.
Given Data / Assumptions:
- BJT: transconductance controlled by base current; notable for high current gain.
- MOSFET: insulated gate offers extremely high input impedance; gate controls channel voltage-wise.
- Tunnel diode: forward I–V with negative-resistance region due to quantum tunneling.
- Zener diode: reverse breakdown used for voltage regulation/reference.
Concept / Approach:
Assign each well-known property: BJT → high current gain; MOSFET → high input impedance; tunnel diode → voltage-controlled negative resistance; Zener → voltage regulation. This reflects standard device physics and datasheet usage.
Step-by-Step Solution:
A (BJT) → 2 (high current gain).B (MOSFET) → 4 (very high input impedance).C (Tunnel diode) → 1 (negative resistance).D (Zener) → 3 (voltage regulation).Verification / Alternative check:
Any devices text confirms these hallmark roles and IV characteristics.
Why Other Options Are Wrong:
Swapping Zener with MOSFET or tunnel diode contradicts their IV curves and intended application domains.
Common Pitfalls:
Confusing “high input impedance” (MOSFET) with “high current gain” (BJT); both are not interchangeable metrics.
Final Answer:
A-2, B-4, C-1, D-3.