Electronic devices – Match each device to its hallmark characteristic List I (Device) A. Bipolar junction transistor (BJT) B. MOSFET C. Tunnel diode D. Zener diode List II (Characteristic) Voltage-controlled negative resistance region High current gain Voltage regulation (nearly constant reverse-breakdown voltage) Very high input impedance Choose the correct mapping.

Introduction / Context:
Many exam items test recognition of signature traits of common devices. Correctly mapping these traits helps you rapidly choose the right component in analog design and troubleshooting.

Given Data / Assumptions:

• BJT: transconductance controlled by base current; notable for high current gain.
• MOSFET: insulated gate offers extremely high input impedance; gate controls channel voltage-wise.
• Tunnel diode: forward I–V with negative-resistance region due to quantum tunneling.
• Zener diode: reverse breakdown used for voltage regulation/reference.

Concept / Approach:

Assign each well-known property: BJT → high current gain; MOSFET → high input impedance; tunnel diode → voltage-controlled negative resistance; Zener → voltage regulation. This reflects standard device physics and datasheet usage.

Step-by-Step Solution:

Verification / Alternative check:

Any devices text confirms these hallmark roles and IV characteristics.

Why Other Options Are Wrong:

Swapping Zener with MOSFET or tunnel diode contradicts their IV curves and intended application domains.

Common Pitfalls:

Confusing “high input impedance” (MOSFET) with “high current gain” (BJT); both are not interchangeable metrics.

Final Answer:

A-2, B-4, C-1, D-3.