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Do both IMPATT and TRAPATT microwave diodes rely on the avalanche effect as part of their operation?

Difficulty: Easy

Correct Answer: True

Explanation:


Introduction / Context:
IMPATT (IMPact Avalanche Transit-Time) and TRAPATT (TRApped Plasma Avalanche Triggered Transit) diodes are negative-resistance microwave devices used in oscillators and amplifiers.


Given Data / Assumptions:

  • Both devices use avalanche breakdown to initiate carrier multiplication.
  • Transit-time effects provide the necessary phase delay for negative resistance.


Concept / Approach:
In IMPATT, carriers generated by avalanche are swept across the drift region, producing a 180° current–voltage phase shift. TRAPATT also starts with avalanche, but operates with a trapped plasma domain and typically exhibits higher efficiency and lower operating frequency than IMPATT.


Step-by-Step Solution:

Avalanche multiplication → carrier surge.Transit-time through drift region → phase delay leading to negative resistance.Both devices depend on the avalanche trigger to start the process.


Verification / Alternative check:
Standard microwave device references categorize both as avalanche transit-time devices, differing in domain dynamics and efficiency.


Why Other Options Are Wrong:

Statements that only one is avalanche-based are incorrect.Frequency limits (e.g., 'only above 100 GHz') are irrelevant to the avalanche principle.


Common Pitfalls:

Confusing Gunn diodes (transferred electron effect) with avalanche devices.


Final Answer:

True
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