Difficulty: Easy
Correct Answer: read, byte erase and byte write operations
Explanation:
Introduction / Context:
Nonvolatile memories differ in their erase/write granularity. EEPROMs (Electrically Erasable Programmable ROMs) allow erasing and writing at the byte level, unlike UV-EPROMs (chip erase with UV light) or many NOR/NAND flash memories (block or sector erase).
Given Data / Assumptions:
Concept / Approach:
Match the definition: EEPROM supports random byte write and byte erase alongside standard read operations. Therefore, options that include 'chip erase' are more indicative of EPROM (UV) or Flash devices rather than EEPROM.
Step-by-Step Solution:
Verification / Alternative check:
Consult datasheets for 24xx/28xx series EEPROMs: specify byte write/erase cycles and endurance, not chip-wide erase requirements.
Why Other Options Are Wrong:
Common Pitfalls:
Final Answer:
int
range of −32768 to +32767)?
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