The transistor of following figure in Si diode with a base current of 40 μA and ICBO = 0, if VBB = 6V, RE = 2 kΩ and β = 90, IBQ = 20 μA then RB =

• 200 kΩ
• 265 kΩ
• 150 kΩ
• 100 kΩ

Correct Answer: 265 kΩ

Explanation:

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