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  • Question
  • What is a type of doping material?


  • Options
  • A. extrinsic semiconductor material
  • B. pentavalent material
  • C. n-type semiconductor
  • D. majority carriers

  • Correct Answer
  • pentavalent material 


  • Semiconductor Principles problems


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    • 1. A commonly used pentavalent material is:

    • Options
    • A. arsenic
    • B. boron
    • C. gallium
    • D. neon
    • Discuss
    • 2. Forward bias of a silicon P-N junction will produce a barrier voltage of approximately how many volts?

    • Options
    • A. 0.2
    • B. 0.3
    • C. 0.7
    • D. 0.8
    • Discuss
    • 3. Minority carriers are many times activated by:

    • Options
    • A. heat
    • B. pressure
    • C. dopants
    • D. forward bias
    • Discuss
    • 4. If conductance increases as temperature increases, this is known as a:

    • Options
    • A. positive coefficient
    • B. negative current flow
    • C. negative coefficient
    • D. positive resistance
    • Discuss
    • 5. What is an energy gap?

    • Options
    • A. the space between two orbital shells
    • B. the energy equal to the energy acquired by an electron passing a 1 V electric field
    • C. the energy band in which electrons can move freely
    • D. an energy level at which an electron can exist
    • Discuss
    • 6. In "n" type material, majority carriers would be:

    • Options
    • A. holes
    • B. dopants
    • C. slower
    • D. electrons
    • Discuss
    • 7. When is a P-N junction formed?

    • Options
    • A. in a depletion region
    • B. in a large reverse biased region
    • C. the point at which two opposite doped materials come together
    • D. whenever there is a forward voltage drop
    • Discuss
    • 8. Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

    • Options
    • A. 1
    • B. 2
    • C. 4
    • D. 6
    • Discuss
    • 9. A P-N junction mimics a closed switch when it:

    • Options
    • A. has a low junction resistance
    • B. is reverse biased
    • C. cannot overcome its barrier voltage
    • D. has a wide depletion region
    • Discuss
    • 10. What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities?

    • Options
    • A. conductivity
    • B. resistance
    • C. power
    • D. all of the above
    • Discuss


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