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  • Question
  • The power dissipation in a transistor is the product of


  • Options
  • A. emitter current and emitter to base voltage
  • B. emitter current and collector to emitter voltage
  • C. collector current and collector to emitter voltage
  • D. none of the above

  • Correct Answer
  • collector current and collector to emitter voltage 

    Explanation
    Maximum power dissipation occurs at collector junction.

    Electronic Devices and Circuits problems


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    • 1. In a degenerate n type semiconductor material, the Fermi level,

    • Options
    • A. is in valence band
    • B. is in conduction band
    • C. is at the centre in between valence and conduction bands
    • D. is very near valence band
    • Discuss
    • 2. The normal operation of JFET is

    • Options
    • A. constant voltage region
    • B. constant current region
    • C. both constant voltage and constant current regions
    • D. either constant voltage or constant current region
    • Discuss
    • 3. A particular green LED emits light of wavelength 5490, Å, the energy bandgap of the semiconductor material used there is .. h = 6.6 x 10-34 J sec.

    • Options
    • A. 2.26 eV
    • B. 1.98 eV
    • C. 1.17 eV
    • D. 0.74 eV
    • Discuss
    • 4. Ferrite have

    • Options
    • A. low copper loss
    • B. low eddy current loss
    • C. low resistivity
    • D. higher specific gravity compared to iron
    • Discuss
    • 5. A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.

    • Options
    • A. 30 pA
    • B. 40 pA
    • C. 50 pA
    • D. 60 pA
    • Discuss
    • 6. In an n-p-n transistor biased for operation in forward active region

    • Options
    • A. emitter is positive with respect to base
    • B. collector is positive with respect to base
    • C. base is positive with respect to emitter and collector is positive with respect to base
    • D. none of the above
    • Discuss
    • 7. In a zener diode

    • Options
    • A. the forward current is very high
    • B. sharp breakdown occurs at a certain reverse voltage
    • C. the ratio v-i can be negative
    • D. there are two p-n junctions
    • Discuss
    • 8. As compared to an ordinary semiconductor diode, a Schottky diode

    • Options
    • A. has lower cut in voltage
    • B. has higher cut in voltage
    • C. lower reverse saturation current
    • D. both (b) and (c)
    • Discuss
    • 9. A periodic voltage has following value for equal time intervals changing suddenly from one value to next... 0, 5, 10, 20, 50, 60, 50, 20, 10, 5, 0, -5, -10 etc. Then rms value of the waveform is

    • Options
    • A. 31 V
    • B. 32 V
    • C. insufficient data
    • D. none of these
    • Discuss
    • 10. Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.

      Reason (R): High reverse voltage causes Avalanche effect.


    • Options
    • A. Both A and R are true and R is correct explanation of A
    • B. Both A and R are true but R is not a correct explanation of A
    • C. A is true but R is false
    • D. A is false but R is true
    • Discuss


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