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  • Question
  • A particular green LED emits light of wavelength 5490, Å, the energy bandgap of the semiconductor material used there is .. h = 6.6 x 10-34 J sec.


  • Options
  • A. 2.26 eV
  • B. 1.98 eV
  • C. 1.17 eV
  • D. 0.74 eV

  • Correct Answer
  • 2.26 eV 

    Explanation
    From Plank equation A particular green LED emits light of wavelength 5490, Å, the energy bandgap of the semiconductor ma joule

    to convert it into electron volt it will be divided by 1.6 x 10-19.


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    • Options
    • A. low copper loss
    • B. low eddy current loss
    • C. low resistivity
    • D. higher specific gravity compared to iron
    • Discuss
    • 2. A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.

    • Options
    • A. 30 pA
    • B. 40 pA
    • C. 50 pA
    • D. 60 pA
    • Discuss
    • 3. Recombination produces new electron-hole pairs

    • Options
    • A. True
    • B. False
    • Discuss
    • 4. In an n channel JFET, the gate is

    • Options
    • A. n type
    • B. p type
    • C. either n or p
    • D. partially n & partially p
    • Discuss
    • 5. The number of doped regions in PIN diode is

    • Options
    • A. 1
    • B. 2
    • C. 3
    • D. 1 or 2
    • Discuss
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    • Options
    • A. constant voltage region
    • B. constant current region
    • C. both constant voltage and constant current regions
    • D. either constant voltage or constant current region
    • Discuss
    • 7. In a degenerate n type semiconductor material, the Fermi level,

    • Options
    • A. is in valence band
    • B. is in conduction band
    • C. is at the centre in between valence and conduction bands
    • D. is very near valence band
    • Discuss
    • 8. The power dissipation in a transistor is the product of

    • Options
    • A. emitter current and emitter to base voltage
    • B. emitter current and collector to emitter voltage
    • C. collector current and collector to emitter voltage
    • D. none of the above
    • Discuss
    • 9. In an n-p-n transistor biased for operation in forward active region

    • Options
    • A. emitter is positive with respect to base
    • B. collector is positive with respect to base
    • C. base is positive with respect to emitter and collector is positive with respect to base
    • D. none of the above
    • Discuss
    • 10. In a zener diode

    • Options
    • A. the forward current is very high
    • B. sharp breakdown occurs at a certain reverse voltage
    • C. the ratio v-i can be negative
    • D. there are two p-n junctions
    • Discuss


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