In a bipolar transistor the barrier potential 0 a total of 0.7 V 0.7 V across ea

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Question
In a bipolar transistor the barrier potential
Options
A. 0
B. a total of 0.7 V
C. 0.7 V across each depletion layer
D. 0.35 V

Correct Answer

0.7 V across each depletion layer

Explanation

Since there are two p-n junctions, there are two depletion layers and 0.7 V across each layer.

Electronic Devices and Circuits problems

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1. When a voltage is applied to a semiconductor crystal then the free electrons will flow.
Options
A. towards positive terminal
B. towards negative terminal
C. either towards positive terminal or negative terminal
D. towards positive terminal for 1 ?s and towards negative terminal for next 1 ?s

3. In which region of a CE bipolar transistor is collector current almost constant?
Options
A. Saturation region
B. Active region
C. Breakdown region
D. Both saturation and active region

4. The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification
Options
A. AB
B. BC
C. CD
D. BD

5. In which of these is reverse recovery time nearly zero?
Options
A. Zener diode
B. Tunnel diode
C. Schottky diode
D. PIN diode

6. The word enhancement mode is associated with
Options
A. tunnel diode
B. MOSFET
C. JFET
D. photo diode

7. At very high temperatures the extrinsic semi conductors become intrinsic because
Options
A. drive in diffusion of dopants and carriers
B. band to band transition dominants over impurity ionization
C. impurity ionization dominants over band to band transition
D. band to band transition is balanced by impurity ionization

8. A potential of 7 V is applied to a silicon diode. A resistance of 1 K ohm is also in series with the diode. The current is
Options
A. 7 mA
B. 6.3 mA
C. 0.7 mA
D. 0

10. The number of doped regions in PIN diode is
Options
A. 1
B. 2
C. 3
D. 1 or 2

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