Rectifier design — diode voltage stress: In a full-wave bridge rectifier, do the diodes require a higher Peak Inverse Voltage (PIV) rating than the diodes in a full-wave center-tapped rectifier?

Introduction / Context:
PIV (Peak Inverse Voltage) determines how much reverse voltage a diode must withstand without breaking down. Choosing the correct PIV prevents catastrophic failure in rectifier designs. Two common topologies—full-wave bridge and full-wave center-tapped (FWCT)—impose different diode reverse stresses for the same secondary RMS voltage.

Given Data / Assumptions:

• Ideal transformer and diodes for first-order comparison.
• Same secondary RMS voltage basis between topologies.
• Pulsating DC load without excessive filtering effects on peak values.

Concept / Approach:
In a bridge rectifier, each non-conducting diode typically sees approximately the transformered secondary peak voltage V_peak. In an FWCT rectifier, each diode must withstand about 2 * V_peak because its non-conducting diode is reverse-biased by the full end-to-end secondary while the other end swings to the opposite peak. Therefore, for the same secondary RMS, the required PIV per diode is lower in the bridge than in the FWCT topology.

Step-by-Step Solution:

Verification / Alternative check:
Check standard design tables: for 12 V_rms secondary in a bridge, PIV ≈ 20–50 V is often sufficient; in FWCT with the same winding, designers choose diodes with roughly double the peak capability.

Why Other Options Are Wrong:
“Correct” contradicts standard analysis. Phase count, load type, or line frequency do not reverse this fundamental PIV relationship for basic single-phase rectification.

Common Pitfalls:
Confusing secondary segment voltages in center-tapped designs; forgetting that “per diode” stress differs because of topology.

Final Answer:
Incorrect