Does transistor current gain strictly vary inversely with collector current? Evaluate the claim: “Current gain in a transistor is inversely proportional to collector current.”

Introduction / Context:
Datasheets show that a BJT’s DC current gain (beta or h_FE) is not a universal constant; it varies with collector current, temperature, and device geometry. This question checks whether the variation follows a strict inverse proportionality with collector current, as sometimes mistakenly assumed.

Given Data / Assumptions:

• Device: general-purpose silicon BJT.
• Operating region: forward-active (not deliberately in saturation).
• We consider typical beta versus Ic behavior from datasheets.

Concept / Approach:
Empirically, beta typically rises with Ic from very small currents to a moderate range, reaches a plateau, and then may fall at high Ic due to high-level injection and other effects. This nonmonotonic behavior contradicts “inversely proportional.” While small-signal transconductance gm = Ic / V_T does scale with Ic, beta = Ic / Ib does not follow a simple 1/Ic law.

Step-by-Step Solution:

Verification / Alternative check:
Examine manufacturer graphs (h_FE vs Ic) for popular BJTs (e.g., 2N3904, BC547); curves clearly are not a simple inverse function.

Why Other Options Are Wrong:

Common Pitfalls:
Assuming a fixed beta for precision calculations; ignoring temperature and process variation that broaden beta ranges.

Final Answer:
Incorrect