Schottky TTL behavior: Do Schottky TTL logic gates reduce saturation delay by preventing the transistors from entering deep saturation (thereby speeding up turn-off)?

Introduction / Context:
Standard TTL devices can suffer from storage delay when a transistor saturates. Schottky TTL adds Schottky diodes to clamp the base–collector junction, limiting saturation and cutting turn-off time. This question verifies understanding of that speed mechanism.

Given Data / Assumptions:

• Schottky barrier diode between base and collector of key transistors.
• Aim is to reduce storage time, not merely dynamic switching loss.
• Supply voltage is the same as standard TTL (typically 5 V).

Concept / Approach:
When a BJT saturates, excess charge must be removed from the base region during turn-off, creating storage delay. A Schottky clamp conducts before the transistor would enter deep saturation, holding VBC small and preventing charge storage. Result: faster transitions and smaller propagation delay.

Step-by-Step Solution:

Verification / Alternative check:
Datasheets for 74S/74LS families show lower propagation delays than 74xx standard TTL. The improvement is attributed to Schottky clamping and other optimizations.

Why Other Options Are Wrong:

• No speed benefit (option b) contradicts measured delays.
• Higher VCC (option c) is not the cause; device structure is.
• Slower due to “extra junctions” (option d) misrepresents Schottky’s role; it actually avoids stored charge.

Common Pitfalls:
Confusing Schottky TTL with ECL or assuming speed comes only from power consumption increases.

Final Answer:
Valid — Schottky TTL reduces saturation delay via clamping.