Difficulty: Easy
Correct Answer: True
Explanation:
Introduction / Context:
Intrinsic semiconductors (such as ultra-pure silicon or germanium) are undoped crystals in which all electrical carriers are generated thermally by breaking covalent bonds. A core conceptual fact is the equality of electron and hole concentrations at equilibrium. This question tests your understanding of carrier generation–recombination balance and charge neutrality in intrinsic materials.
Given Data / Assumptions:
Concept / Approach:
In an intrinsic semiconductor, every electron promoted to the conduction band leaves behind one vacancy (a hole) in the valence band. Therefore, the electron concentration n and hole concentration p satisfy n = p = ni, where ni is the intrinsic carrier concentration determined by the bandgap and temperature. Charge neutrality and mass-action law reinforce this result: n * p = ni^2 and, for intrinsic material, n = p = ni.
Step-by-Step Solution:
Verification / Alternative check:
Using the mass-action law n * p = ni^2: in intrinsic material, symmetry and neutrality give n = p = ni. Any deviation (n ≠ p) implies unbalanced ionized impurities or non-equilibrium injection, which contradicts the intrinsic, equilibrium premise.
Why Other Options Are Wrong:
Common Pitfalls:
Confusing intrinsic (n = p) with extrinsic n-type (n ≫ p) or p-type (p ≫ n); overlooking that illumination or bias can create non-equilibrium where n ≠ p even in otherwise pure material.
Final Answer:
True
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