Typical forward junction voltage: silicon vs. germanium devices Evaluate the statement: “The forward voltage drop for a germanium transistor is 0.7 V and for a silicon transistor is 0.3 V.” Decide whether this is accurate for typical small-signal junctions at room temperature.

Introduction / Context:
Forward junction voltage (approximately measured as base-emitter or diode forward drop) is a practical indicator of material properties and temperature dependence. Confusing silicon and germanium values can mislead troubleshooting and design calculations.

Given Data / Assumptions:

• Room temperature operation, small-signal junctions.
• Nominal forward drops: silicon ~0.6–0.7 V; germanium ~0.2–0.3 V.
• Exact values vary with current, geometry, and temperature.

Concept / Approach:
Silicon has a larger bandgap than germanium; consequently, at a given current and temperature, a silicon junction typically exhibits a higher forward drop than a germanium junction. The statement inverts these values, assigning 0.7 V to germanium and 0.3 V to silicon, which is the opposite of common experience and textbook guidance.

Step-by-Step Solution:

Verification / Alternative check:
Measure a silicon diode (1N4148) vs. a germanium diode (1N34A) under the same current; the silicon device shows a higher V_F at room temperature.

Why Other Options Are Wrong:

Common Pitfalls:
Assuming a fixed “0.7 V” for all devices; remember V_F depends on current and temperature, but Si typically exceeds Ge.

Final Answer:
Incorrect