Curioustab Logo Curioustab
Home » Electronics and Communication Engineering » Microwave Communication

Assertion–Reason: The phenomenon of differential mobility is called the transferred electron effect. Gallium Arsenide (GaAs) exhibits this effect. Evaluate correctness of Assertion (A) and Reason (R).

Difficulty: Hard

Correct Answer: Both A and R are correct and R is correct explanation of A

Explanation:


Introduction / Context:
This question explores semiconductor physics concepts behind the Gunn effect and transferred electron devices. Understanding differential mobility is important in high-frequency microwave device design.


Given Data / Assumptions:

  • Assertion: Differential mobility phenomenon is termed transferred electron effect.
  • Reason: GaAs exhibits transferred electron effect.


Concept / Approach:
Transferred electron effect occurs in materials like GaAs where electrons move from a high-mobility valley to a low-mobility valley under strong electric fields. This leads to negative differential resistance, enabling oscillators.


Step-by-Step Solution:

Assertion is correct: definition of transferred electron effect.Reason is correct: GaAs is the classical material exhibiting this effect (basis of Gunn diodes).Reason also explains Assertion correctly, as GaAs is the experimental evidence of the phenomenon.


Verification / Alternative check:
Microwave engineering textbooks confirm GaAs shows Gunn oscillations due to transferred electron effect.


Why Other Options Are Wrong:

Any option denying either A or R contradicts semiconductor physics facts.


Common Pitfalls:

Confusing transferred electron effect with avalanche or tunneling effects.


Final Answer:

Both A and R are correct and R is correct explanation of A
Next Question→

More Questions from Microwave Communication

Discussion & Comments

No comments yet. Be the first to comment!
Join Discussion