Difficulty: Easy
Correct Answer: static
Explanation:
Introduction / Context:
Dynamic RAM (DRAM) and Static RAM (SRAM) are two common volatile memory technologies. They trade off density, speed, power, and circuit complexity. Understanding the structural difference between their individual memory cells explains why DRAM achieves higher bit densities.
Given Data / Assumptions:
Concept / Approach:
Because a DRAM cell is essentially 1T1C (one transistor plus one capacitor), it occupies less silicon area than an SRAM cell, which uses cross-coupled inverters (four transistors) plus two access transistors (total ≈6T). This makes DRAM denser and cheaper per bit, though it requires periodic refresh to maintain charge, whereas SRAM holds state as long as power is applied without refresh.
Step-by-Step Solution:
Compare DRAM cell (1T1C) to SRAM cell (~6T).Conclude DRAM cell is simpler/smaller; therefore it is smaller than a static RAM cell.Answer: static (SRAM).
Verification / Alternative check:
Datasheets and textbooks list DRAM as higher density, lower cost per bit, and SRAM as faster and simpler to interface but lower density—directly tied to cell complexity.
Why Other Options Are Wrong:
“volatile” describes both DRAM and SRAM; it is not a distinct type. “semiconductor” is the broad category for both. “bipolar” refers to a transistor technology, not the standard classification contrasting DRAM vs. SRAM cells here.
Common Pitfalls:
Confusing system-level simplicity (SRAM interface is simple) with cell-level simplicity (DRAM cell area is smaller).
Final Answer:
static
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