logo

CuriousTab

CuriousTab

Discussion

Home ‣ Electronics ‣ Field Effect Transistors (FET) Comments
  • Question

  • Using voltage-divider biasing, what is the voltage at the gate VGS?

    Using voltage-divider biasing, what is the voltage at the gate VGS? 5.2 V 4.2 V 3.2 V 2.2 V


  • Options
  • A. 5.2 V
  • B. 4.2 V
  • C. 3.2 V
  • D. 2.2 V

  • Correct Answer
  • 5.2 V 

    • Field Effect Transistors (FET) problems

    Search Results

    • 1. When not in use, MOSFET pins are kept at the same potential through the use of:

    • Options
    • A. shipping foil
    • B. nonconductive foam
    • C. conductive foam
    • D. a wrist strap
      • Discuss
    • 2. The transconductance curve of a JFET is a graph of:

    • Options
    • A. IS versus VDS
    • B. IC versus VCE
    • C. ID versus VGS
    • D. ID × RDS
      • Discuss
    • 3. A MOSFET has how many terminals?

    • Options
    • A. 2 or 3
    • B. 3
    • C. 4
    • D. 3 or 4
      • Discuss
    • 4. D-MOSFETs are sometimes used in series to construct a cascode high-frequency amplifier to overcome the loss of:

    • Options
    • A. low output impedance
    • B. capacitive reactance
    • C. high input impedance
    • D. inductive reactance
      • Discuss
    • 5. With a 30-volt VDD, and an 8-kilohm drain resistor, what is the E-MOSFET Q point voltage, with ID = 3 mA?

    • Options
    • A. 6 V
    • B. 10 V
    • C. 24 V
    • D. 30 V
      • Discuss
    • 6. The type of bias most often used with E-MOSFET circuits is:

    • Options
    • A. constant current
    • B. drain-feedback
    • C. voltage-divider
    • D. zero biasing
      • Discuss
    • 7. When VGS = 0 V, a JFET is:

    • Options
    • A. saturated
    • B. an analog device
    • C. an open switch
    • D. cut off
      • Discuss
    • 8. When applied input voltage varies the resistance of a channel, the result is called:

    • Options
    • A. saturization
    • B. polarization
    • C. cutoff
    • D. field effect
      • Discuss
    • 9. Which JFET configuration would connect a high-resistance signal source to a low-resistance load?

    • Options
    • A. source follower
    • B. common-source
    • C. common-drain
    • D. common-gate
      • Discuss
    • 10. What is the transconductance of an FET when △ID = 1 mA and △VGS = 1 V?

    • Options
    • A. 1 kS
    • B. 1 mS
    • C. 1 kΩ
    • D. 1 mΩ
      • Discuss

    Comments

    There are no comments.
Enter a new Comment




Aptitude

Engineering

Programming

Reasoning

Links

Copyright ©CuriousTab. All rights reserved.