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  • Question

  • A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [?r = 3.9; ?0 = 8.85 x 10-14 F/cm, q = 1.6 x 10-19 c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ .


  • Options
  • A. 8.6 x 1011/cm2, p-type
  • B. 8.6 x 1011/cm2, n-type
  • C. 0.86 x 109/cm2, p-type
  • D. 1.02 x 1012/cm2, n-type

  • Correct Answer
  • 8.6 x 1011/cm2, p-type 

    Explanation
    VT(new) = VT(odd) +A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [?r = 3.9; ?0 = 8.85 x 10-

    A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [?r = 3.9; ?0 = 8.85 x 10-

    A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [?r = 3.9; ?0 = 8.85 x 10-= 6.903 x 10-8

    ? A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [?r = 3.9; ?0 = 8.85 x 10-

    ? A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [?r = 3.9; ?0 = 8.85 x 10-

    fB = - 8.6 x 1011

    The threshold voltage is always negative for p-channel and hence implant is of p-type.

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