Difficulty: Easy
Correct Answer: Both A and R are true but R is not the correct explanation of A
Explanation:
Introduction / Context:
Silicon dominates modern semiconductor technology. Understanding the underlying reasons helps students connect material properties to device performance and manufacturing practice.
Given Data / Assumptions:
Concept / Approach:
Silicon has a larger bandgap (~1.12 eV) than germanium (~0.66 eV), leading to far lower intrinsic carrier concentration at room temperature. This provides lower leakage current, better high-temperature operation, and higher breakdown strength, which often translates into higher practical PIV for silicon rectifiers. However, silicon's overall dominance is due to a broader set of reasons: abundant availability, mature processing, excellent native oxide (SiO2) enabling MOS technology, and cost/performance scaling.
Step-by-Step Solution:
Verification / Alternative check:
Historic transitions from germanium to silicon coincided with the rise of planar processing and MOSFETs, enabled by high-quality SiO2—evidence that the oxide and stability advantages, not PIV alone, drove adoption.
Why Other Options Are Wrong:
(a) Overstates the explanatory power of PIV alone. (c) R is not false. (d) A is not false; silicon's dominance is well established.
Common Pitfalls:
Confusing a single device metric with the wider set of materials and manufacturing considerations that determine technology choices.
Final Answer:
Both A and R are true but R is not the correct explanation of A
Discussion & Comments