Difficulty: Hard
Correct Answer: Both A and R are correct and R is correct explanation of A
Explanation:
Introduction / Context:This question explores semiconductor physics concepts behind the Gunn effect and transferred electron devices. Understanding differential mobility is important in high-frequency microwave device design.
Given Data / Assumptions:
Concept / Approach:Transferred electron effect occurs in materials like GaAs where electrons move from a high-mobility valley to a low-mobility valley under strong electric fields. This leads to negative differential resistance, enabling oscillators.
Step-by-Step Solution:
Assertion is correct: definition of transferred electron effect.Reason is correct: GaAs is the classical material exhibiting this effect (basis of Gunn diodes).Reason also explains Assertion correctly, as GaAs is the experimental evidence of the phenomenon.Verification / Alternative check:Microwave engineering textbooks confirm GaAs shows Gunn oscillations due to transferred electron effect.
Why Other Options Are Wrong:
Any option denying either A or R contradicts semiconductor physics facts.Common Pitfalls:
Confusing transferred electron effect with avalanche or tunneling effects.Final Answer:
Both A and R are correct and R is correct explanation of A
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