dv/dt triggering of a thyristor: assertion–reason Assertion (A): A high dv/dt across a thyristor can cause unintended triggering. Reason (R): A high dv/dt drives a displacement (charging) current through the device junctions and capacitances.

Introduction / Context:
Thyristors contain junction capacitances. Rapid changes of voltage (high dv/dt) can force displacement currents that mimic gate-trigger current, inadvertently turning the device on. Protection against dv/dt is a fundamental aspect of gate and snubber design.

Given Data / Assumptions:

• SCR in forward-blocking state.
• Non-zero junction capacitances are present.
• No intentional gate drive applied.

Concept / Approach:

Displacement current through a capacitance is i = C * dv/dt. If this current flows through the gate-cathode or internal junction path, it can exceed the latching threshold and cause turn-on even without a gate pulse.

Step-by-Step Solution:

Verification / Alternative check:

Datasheets specify maximum dv/dt ratings and recommend RC snubbers to limit dv/dt and avoid false turn-on.

Why Other Options Are Wrong:

It is not unrelated; the reason precisely explains the mechanism. Claims that the assertion is false contradict well-known thyristor behavior.

Common Pitfalls:

Neglecting layout-induced stray capacitances; assuming that only gate drive controls turn-on without recognizing dv/dt effects.

Final Answer:

Both A and R are correct and R is the correct explanation of A